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| Presentation | 2008-11-27 09:30 Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)  ED2008-152 CPM2008-101 LQE2008-96 Link to ES Tech. Rep. Archives: ED2008-152 CPM2008-101 LQE2008-96 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arranged InGaN/GaN nanocolumns using Ti mask selective area growth technology by rf-plasma-assisted molecular-beam epitaxy (rf-MBE). The SAG of GaN nanocolumns strongly depended on the growth temperature (Tg), i.e.; at the Tg below 900 oC, no SAG occurred, but above 900 oC, SAG occurred. An excess value of Tg above 900 oC brought about an increased inhomogeneity in the nanocolumn shape. Uniform nanocolumn arrays were grown around the critical temperature of 900 oC. A low supplied nitrogen suppressed the lateral growth of nanocolumn and the nucleation of GaN nanocrystals on the nitrided Ti thin layer. For regularly arranged InGaN/GaN nanocolumn arrays with different In composition, blue to red emissions were observed at room temperature and the PL-FWHM of those was narrower than those of self-organized nanocolumns. The ratio of PL integrated intensity at 300 K to that at 4 K was obtained to be 77% for a sample with 112 nm diameter and 200 nm period. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nanocolumn / Nanorod / Nanowire / Nitride Semiconductor / Selective-area growth / Molecular-Beam Epitaxy / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 323, LQE2008-96, pp. 1-6, Nov. 2008. | |
| Paper # | LQE2008-96 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-152 CPM2008-101 LQE2008-96 Link to ES Tech. Rep. Archives: ED2008-152 CPM2008-101 LQE2008-96 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Nanocolumn |
| Keyword(2) | Nanorod |
| Keyword(3) | Nanowire |
| Keyword(4) | Nitride Semiconductor |
| Keyword(5) | Selective-area growth |
| Keyword(6) | Molecular-Beam Epitaxy |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroto Sekiguchi |
| 1st Author's Affiliation | Sophia University (Sophia Univ.) |
| 2nd Author's Name | Akihiko Kikuchi |
| 2nd Author's Affiliation | Sophia University (Sophia Univ.) |
| 3rd Author's Name | Katsumi Kishino |
| 3rd Author's Affiliation | Sophia University (Sophia Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-11-27 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2008-152, CPM2008-101, LQE2008-96 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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