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Paper Abstract and Keywords
Presentation 2008-11-27 10:20
A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy
Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98
Abstract (in Japanese) (See Japanese page) 
(in English) Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. We have analyzed thickness and photoluminescence (PL) profiles of InGaN layers around the relatively wide (>10$\mu$m) selective masks. Numerical simulation using vapor phase diffusion model was also carried out. To obtain deposition selectivity between masks and crystal surface, in-situ etching using hydrogen is effective because it prevents GaN nucleation on mask. Consequently, the maximum growth rate enhancement of 4.8 and photoluminescence peak shift of 54 nm (nominal 11% indium composition shift) were achieved for InGaN bulk layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal-organic vapor phase epitaxy / selective area growth / gallium nitride / indium gallium nitride / kinetics analysis / growth model / monolithic integration /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-98, pp. 13-16, Nov. 2008.
Paper # LQE2008-98 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-154 CPM2008-103 LQE2008-98

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy 
Sub Title (in English)  
Keyword(1) Metal-organic vapor phase epitaxy  
Keyword(2) selective area growth  
Keyword(3) gallium nitride  
Keyword(4) indium gallium nitride  
Keyword(5) kinetics analysis  
Keyword(6) growth model  
Keyword(7) monolithic integration  
Keyword(8)  
1st Author's Name Tomonari Shioda  
1st Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
2nd Author's Name Yuki Tomita  
2nd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
3rd Author's Name Masakazu Sugiyama  
3rd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
4th Author's Name Yukihiro Shimogaki  
4th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
5th Author's Name Yoshiaki Nakano  
5th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
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Speaker Author-1 
Date Time 2008-11-27 10:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-154, CPM2008-103, LQE2008-98 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.13-16 
#Pages 4 
Date of Issue 2008-11-20 (ED, CPM, LQE) 

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