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Paper Abstract and Keywords
Presentation 2008-11-27 14:00
A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity
Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic) ED2008-160 CPM2008-109 LQE2008-104
Abstract (in Japanese) (See Japanese page) 
(in English) A novel GaN-based electrically-pumped horizontal-cavity surface-emitting laser is presented. Surface-emission was realized by total internal reflection (TIR) using an inclined mirror formed at one end of the horizontal cavity of an edge-emitting laser. The mirror was inclined by 45-degrees with respect to the surface normal. The guided light propagating along the horizontal-cavity is reflected at the mirror to the surface normal. Argon-milling was applied to the FIB-etched surface to remove an FIB-damaged layer which causes an optical loss. As a result, the external quantum efficiency increased significantly.
The fabricated device with the stripe width of 8m and the cavity length of 600um lased at 390nm with a threshold current of 250mA, which is corredponding to a threshold current desnity of 5.4 kA/cm2. Surface-emission was obtained with the maximum light output exceeding 10mW.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / surface-emitting laser / inclined mirror / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-104, pp. 37-40, Nov. 2008.
Paper # LQE2008-104 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-160 CPM2008-109 LQE2008-104

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) surface-emitting laser  
Keyword(3) inclined mirror  
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1st Author's Name Masao Kawaguchi  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Satoshi Tamura  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Masaaki Yuri  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2008-11-27 14:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-160, CPM2008-109, LQE2008-104 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.37-40 
#Pages 4 
Date of Issue 2008-11-20 (ED, CPM, LQE) 

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