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| Presentation | 2008-11-27 14:00 A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic)  ED2008-160 CPM2008-109 LQE2008-104 Link to ES Tech. Rep. Archives: ED2008-160 CPM2008-109 LQE2008-104 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A novel GaN-based electrically-pumped horizontal-cavity surface-emitting laser is presented. Surface-emission was realized by total internal reflection (TIR) using an inclined mirror formed at one end of the horizontal cavity of an edge-emitting laser. The mirror was inclined by 45-degrees with respect to the surface normal. The guided light propagating along the horizontal-cavity is reflected at the mirror to the surface normal. Argon-milling was applied to the FIB-etched surface to remove an FIB-damaged layer which causes an optical loss. As a result, the external quantum efficiency increased significantly. The fabricated device with the stripe width of 8m and the cavity length of 600um lased at 390nm with a threshold current of 250mA, which is corredponding to a threshold current desnity of 5.4 kA/cm2. Surface-emission was obtained with the maximum light output exceeding 10mW. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / surface-emitting laser / inclined mirror / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 323, LQE2008-104, pp. 37-40, Nov. 2008. | |
| Paper # | LQE2008-104 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-160 CPM2008-109 LQE2008-104 Link to ES Tech. Rep. Archives: ED2008-160 CPM2008-109 LQE2008-104 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | surface-emitting laser |
| Keyword(3) | inclined mirror |
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| 1st Author's Name | Masao Kawaguchi |
| 1st Author's Affiliation | Panasonic Corporation (Panasonic) |
| 2nd Author's Name | Satoshi Tamura |
| 2nd Author's Affiliation | Panasonic Corporation (Panasonic) |
| 3rd Author's Name | Masaaki Yuri |
| 3rd Author's Affiliation | Panasonic Corporation (Panasonic) |
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| Speaker | Author-1 |
| Date Time | 2008-11-27 14:00:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2008-160, CPM2008-109, LQE2008-104 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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