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Paper Abstract and Keywords
Presentation 2008-11-28 09:25
Analysis of AlGaN Growth on MOVPE by Computational Simulation
Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.) ED2008-170 CPM2008-119 LQE2008-114
Abstract (in Japanese) (See Japanese page) 
(in English) We have reported analysis of reaction pathways in metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlN films by using computational fluid dynamics (CFD) simulations considering radiative heat transfer. AlGaN MOVPE growths are calculated at various reactor pressures, 10－100 kPa, in this paper. In the case of 100 kPa, it is found that parasitic reactions occur between TMGa, TMAl and NH3. At low pressure of 10 kPa, parasitic reactions suppress since the collision rate among the gaseous molecules are decreases in the lower pressure.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / MOVPE / Computational Fluid Dynamics / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-114, pp. 89-92, Nov. 2008.
Paper # LQE2008-114 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-170 CPM2008-119 LQE2008-114

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of AlGaN Growth on MOVPE by Computational Simulation 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) MOVPE  
Keyword(3) Computational Fluid Dynamics  
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1st Author's Name Akira Hirako  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
2nd Author's Name Masaya Ichikawa  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
3rd Author's Name Kennichi Nakamura  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
4th Author's Name Kazuhiro Ohkawa  
4th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
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Speaker Author-1 
Date Time 2008-11-28 09:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-170, CPM2008-119, LQE2008-114 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.89-92 
#Pages 4 
Date of Issue 2008-11-20 (ED, CPM, LQE) 

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