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Paper Abstract and Keywords
Presentation 2008-12-05 15:30
Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations
Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology) SDM2008-193
Abstract (in Japanese) (See Japanese page) 
(in English) Changes in electrical properties of metal-oxide-semiconductor irradiated by plasma or UV laser are reported. Capacitance response with voltage at a frequency of 100kHz was measured after hydrogen plasma at RF power of 50W, oxegen and argon plasma of at 100W irradiation for duration from 15 to 60 min. The oxide capacitance of 100kHz C-V characteristics increased from 3.5×10-8(no plasma irradiation) to 4.3×10-8(H2 plasma), 3.9×10-8(O2 plasma), 3.9×10-8(Ar plasma) F/cm2, respectively. The minimum depletion layer capacitance decreased from 1.3×10-8(no plasma irradiation) to 3.9×10-9(H2 plasma), 8.8×10-9(O2 plasma), 3.3×10-9(Ar plasma) F/cm2. The decrease in the capacitance was observed when the scan time of the gate voltage was shorter than 10s/0.1V. Moreover, the increase in the leak current density was observed. Decrease in the depletion capacitance would be caused by the increase in the carrier lifetime of electron minority carrier or the electron leak current. The density of the deep level defect states at the SiO2/Si interface increased from 3.5×1011(no plasma) to 2.9×1011(H2 plasma) , 2.5×1011(O2 plasma)cm-2 as plasma irrdiation time increased from 0 to 60min. The fixed positive charge decreased from 3.0×1011(no plasma) to 1.5×1011(H2 plasma), 2.5×1011(O2 plasma)cm-2. SiO2/Si was also irradiated by 30-ns-pulsed XeCl excimer laser with a wavelength of 308nm. The oxide capacitance decreased.
Keyword (in Japanese) (See Japanese page) 
(in English) plasma treatment / UV laser / C-V characteristics / leak current / carrier lifetime / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 335, SDM2008-193, pp. 49-54, Dec. 2008.
Paper # SDM2008-193 
Date of Issue 2008-11-28 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2008-12-05 - 2008-12-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University, Katsura Campus, A1-001 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2008-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations 
Sub Title (in English)  
Keyword(1) plasma treatment  
Keyword(2) UV laser  
Keyword(3) C-V characteristics  
Keyword(4) leak current  
Keyword(5) carrier lifetime  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Megumu Takiuchi  
1st Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo University of Agriculture and Technology)
2nd Author's Name Toshiyuki Sameshima  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo University of Agriculture and Technology)
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Speaker Author-1 
Date Time 2008-12-05 15:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2008-193 
Volume (vol) vol.108 
Number (no) no.335 
Page pp.49-54 
#Pages 6 
Date of Issue 2008-11-28 (SDM) 

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