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Paper Abstract and Keywords
Presentation 2008-12-05 11:10
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam
Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.) SDM2008-186
Abstract (in Japanese) (See Japanese page) 
(in English) Irradiation effect of an ethanol cluster ion beam on silicon surface was investigated. The cluster size distribution was controlled by the retarding voltage method. Sputtered depths in silicon induced by the ethanol cluster ion beams were larger than those in silicon dioxide. The surface roughness of Si substrate decreased with increase in the retarding voltage. Similarly, the number of disordered atoms in Si substrate decreased with increase in the retarding voltage when the acceleration voltage was 3 kV. On the other hand, the number of disordered atoms in Si substrate saturated with the acceleration and retarding voltages when the acceleration voltage was larger than 6 kV.
Keyword (in Japanese) (See Japanese page) 
(in English) Cluster ion beam / Surface modification / Sputtering / Ethanol / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 335, SDM2008-186, pp. 11-15, Dec. 2008.
Paper # SDM2008-186 
Date of Issue 2008-11-28 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-186

Conference Information
Committee SDM  
Conference Date 2008-12-05 - 2008-12-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University, Katsura Campus, A1-001 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2008-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam 
Sub Title (in English)  
Keyword(1) Cluster ion beam  
Keyword(2) Surface modification  
Keyword(3) Sputtering  
Keyword(4) Ethanol  
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1st Author's Name Hiromichi Ryuto  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Ryosuke Ozaki  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Gikan H. Takaoka  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2008-12-05 11:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2008-186 
Volume (vol) vol.108 
Number (no) no.335 
Page pp.11-15 
#Pages 5 
Date of Issue 2008-11-28 (SDM) 

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