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Paper Abstract and Keywords
Presentation 2009-01-15 13:00
A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.) ED2008-210 MW2008-175
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes circuit design and measurement results of a phase-shifter built-in spiral directional coupler and its application to a GaAs integrated power detector for use in wireless applications. To enhance isolation and directivity characteristics, a 180º LC phase shifter is placed between the coupling port and isolation port in the coupler, because at the coupling port, the phase shifter cancels out leakage signal propagating from the output port to the coupling port. Measurement results of a prototype GaAs HBT RF power detector integrated with a phase-shifter built-in directional coupler on the same die are as follows. The coupler can exhibit high directivity of 27 dB at 2.6 GHz, which is about 9 dB higher than that of the cou-pler without a phase shifter. The coupler-integrated detector can deliver a detection voltage of 0.5-2.2V over a 8-23-dBm input power range at 2.6 GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The measurement also shows that the detector is capable of suppressing power detection error within ±0.25dB under the 4:1 VSWR load mismatching condition.
Keyword (in Japanese) (See Japanese page) 
(in English) Directional couplers / RF power detector / heterojunction bipolar transistors / MMIC / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-210, pp. 71-76, Jan. 2009.
Paper # ED2008-210 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-210 MW2008-175

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate 
Sub Title (in English)  
Keyword(1) Directional couplers  
Keyword(2) RF power detector  
Keyword(3) heterojunction bipolar transistors  
Keyword(4) MMIC  
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1st Author's Name Kazuya Yamamoto  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
2nd Author's Name Hitoshi Kurusu  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
3rd Author's Name Miyo Miyashita  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
4th Author's Name Satoshi Suzuki  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
5th Author's Name Nobuyuki Ogawa  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
6th Author's Name Masatoshi Nakayama  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Co.)
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Speaker Author-1 
Date Time 2009-01-15 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-210, MW2008-175 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.71-76 
#Pages 6 
Date of Issue 2009-01-07 (ED, MW) 

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