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Paper Abstract and Keywords
Presentation 2009-01-16 10:20
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the high electron saturation velocity and breakdown electric field. In order to improve the device performance such as increasing the transconductance, use of thinner AlGaN is strongly needed. However, thinning the AlGaN causes serious reduction of the sheet carrier concentration. In this paper, we propose the use of so-called in-situ SiN as a gate insulator, which effectively increase sheet carrier concentration. The crystalline structure is conformed for in-situ SiN with abrupt interface at SiN/AlGaN. By depositing the in-situ SiN, the sheet carrier concentration is drastically increased. In particular, the increase is significant for thinner AlGaN. The fmax exhibits over 180 GHz with the drain voltage up to 60 V, which strongly suggests that the device is advantageous for mm-wave power amplifiers.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HFET / in-situ SiN / MIS / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-220, pp. 125-128, Jan. 2009.
Paper # ED2008-220 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators 
Sub Title (in English)  
Keyword(1) AlGaN/GaN HFET  
Keyword(2) in-situ SiN  
Keyword(3) MIS  
Keyword(4)  
Keyword(5)  
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1st Author's Name Masayuki Kuroda  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Tomohiro Murata  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Satoshi Nakazawa  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Toshiyuki Takizawa  
4th Author's Affiliation Panasonic Corporation (Panasonic)
5th Author's Name Masaaki Nishijima  
5th Author's Affiliation Panasonic Corporation (Panasonic)
6th Author's Name Manabu Yanagihara  
6th Author's Affiliation Panasonic Corporation (Panasonic)
7th Author's Name Tetsuzo Ueda  
7th Author's Affiliation Panasonic Corporation (Panasonic)
8th Author's Name Tsuyoshi Tanaka  
8th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2009-01-16 10:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-220, MW2008-185 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.125-128 
#Pages 4 
Date of Issue 2009-01-07 (ED, MW) 

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