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| Presentation | 2009-02-27 09:50 Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)  ED2008-234 SDM2008-226 Link to ES Tech. Rep. Archives: ED2008-234 SDM2008-226 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation than NW nFET is observed. To enhance the MOSFET mobility, tensile and compressive direction is beneficial to transverse and longitudinal strain, respectively. The strain effect is decreased as NW width becomes narrower due to small effective mass modulation at narrow NW pFET. In the SHT, Coulomb oscillation characteristics are modulated by the strain and after oscillation vanishes, current modulation converges to constant value due to drift current in SHT. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nanowire MOSFET / Single-hole Transistor / Uniaxial strain / Mobility enhancement / Effective mass / Tunneling probability / Quantum energy level / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 438, SDM2008-226, pp. 59-62, Feb. 2009. | |
| Paper # | SDM2008-226 | |
| Date of Issue | 2009-02-19 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-234 SDM2008-226 Link to ES Tech. Rep. Archives: ED2008-234 SDM2008-226 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2009-02-26 - 2009-02-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-02-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain |
| Sub Title (in English) | |
| Keyword(1) | Nanowire MOSFET |
| Keyword(2) | Single-hole Transistor |
| Keyword(3) | Uniaxial strain |
| Keyword(4) | Mobility enhancement |
| Keyword(5) | Effective mass |
| Keyword(6) | Tunneling probability |
| Keyword(7) | Quantum energy level |
| Keyword(8) | |
| 1st Author's Name | YeonJoo Jeong |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Chen Jiezhi |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Takuya Saraya |
| 3rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 4th Author's Name | Toshiro Hiramoto |
| 4th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2009-02-27 09:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | ED2008-234, SDM2008-226 |
| Volume (vol) | vol.108 |
| Number (no) | no.437(ED), no.438(SDM) |
| Page | pp.59-62 |
| #Pages | 4 |
| Date of Issue | 2009-02-19 (ED, SDM) |
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