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Paper Abstract and Keywords
Presentation 2009-04-14 13:50
A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9
Abstract (in Japanese) (See Japanese page) 
(in English) A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 level cell, we adapted three step programming (TSP) and sequential sense method (SSC).
As a result, we realized 7.8MB/s with 4bit/cell.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND Flash memory / 43nm CMOS Technology / 4 bit/cell / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 2, ICD2009-9, pp. 43-46, April 2009.
Paper # ICD2009-9 
Date of Issue 2009-04-06 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2009-9

Conference Information
Committee ICD  
Conference Date 2009-04-13 - 2009-04-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Daikanso (Matsushima, Miyagi) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Memory Technologies 
Paper Information
Registration To ICD 
Conference Code 2009-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS 
Sub Title (in English)  
Keyword(1) NAND Flash memory  
Keyword(2) 43nm CMOS Technology  
Keyword(3) 4 bit/cell  
Keyword(4)  
Keyword(5)  
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1st Author's Name Mitsuaki Honma  
1st Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
2nd Author's Name Cuong Trinh  
2nd Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
3rd Author's Name Noboru Shibata  
3rd Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
4th Author's Name Takeshi Nakai  
4th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
5th Author's Name Mikio Ogawa  
5th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
6th Author's Name Junpei Sato  
6th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
7th Author's Name Yoshikazu Takeyama  
7th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
8th Author's Name Katsuaki Isobe  
8th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
9th Author's Name Binh Le  
9th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
10th Author's Name Farookh Moogat  
10th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
11th Author's Name Nima Mokhlesi  
11th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
12th Author's Name Kenji Kozakai  
12th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
13th Author's Name Patrick Hong  
13th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
14th Author's Name Teruhiko Kamei  
14th Author's Affiliation SanDisk Corporation.. (SanDisk Corp.)
15th Author's Name Kiyoaki Iwasa  
15th Author's Affiliation TOSHIBA Corp. (Toshiba Corp.)
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Speaker Author-1 
Date Time 2009-04-14 13:50:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2009-9 
Volume (vol) vol.109 
Number (no) no.2 
Page pp.43-46 
#Pages 4 
Date of Issue 2009-04-06 (ICD) 

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