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Paper Abstract and Keywords
Presentation 2009-04-14 13:00
[Invited Talk] A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.) ICD2009-8
Abstract (in Japanese) (See Japanese page) 
(in English) A 113mm2 32Gbit 3bit/cell (8-levels) NAND Flash memory using 32nm CMOS technology is developed. This 32Gbit Flash die is sufficiently small to fir the microSD memory card format. This is achieved by a combination of 3bit/cell technology and feature-size scaling. In addition, recent technology trend of NAND Flash memory is introduced.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND Flash memory / 32nm CMOS Technology / 3bit/cell / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 2, ICD2009-8, pp. 39-42, April 2009.
Paper # ICD2009-8 
Date of Issue 2009-04-06 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2009-8

Conference Information
Committee ICD  
Conference Date 2009-04-13 - 2009-04-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Daikanso (Matsushima, Miyagi) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Memory Technologies 
Paper Information
Registration To ICD 
Conference Code 2009-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory 
Sub Title (in English)  
Keyword(1) NAND Flash memory  
Keyword(2) 32nm CMOS Technology  
Keyword(3) 3bit/cell  
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Keyword(5)  
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1st Author's Name Takuya Futatsuyama  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Norihiro Fujita  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Naoya Tokiwa  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Yoshihiko Shindo  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Toshiaki Edahiro  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Teruhiko Kamei  
6th Author's Affiliation SanDisk Corporation (SanDisk)
7th Author's Name Hiroaki Nasu  
7th Author's Affiliation SanDisk Corporation (SanDisk)
8th Author's Name Makoto Iwai  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
9th Author's Name Koji Kato  
9th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
10th Author's Name Yasuyuki Fukuda  
10th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
11th Author's Name Naoaki Kanagawa  
11th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
12th Author's Name Naofumi Abiko  
12th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
13th Author's Name Masahide Matsumoto  
13th Author's Affiliation SanDisk Corporation (SanDisk)
14th Author's Name Toshihiko Himeno  
14th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
15th Author's Name Toshifumi Hashimoto  
15th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2009-04-14 13:00:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2009-8 
Volume (vol) vol.109 
Number (no) no.2 
Page pp.39-42 
#Pages 4 
Date of Issue 2009-04-06 (ICD) 

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