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Paper Abstract and Keywords
Presentation 2009-06-19 15:10
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 Link to ES Tech. Rep. Archives: SDM2009-38
Abstract (in Japanese) (See Japanese page) 
(in English) We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (Vfb) shift and Vt variation, and clarified that process integration of gate dielectrics with the capping layer has a risk for additional Vt variation. However, we have found that higher temperature PDA process not only brings higher Vfb shift but also suppresses the Vt variation. High-temperature PDA also has a risk for EOT increase, but process combination of low-temperature annealing before Al2O3 deposition and high temperature PDA after Al2O3 deposition can suppress both the EOT increase and the Vt variation.
Keyword (in Japanese) (See Japanese page) 
(in English) metal gate / high-k gate dielectrics / pMISFET / Al2O3 / flatband voltage / variation / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-38, pp. 67-70, June 2009.
Paper # SDM2009-38 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-38 Link to ES Tech. Rep. Archives: SDM2009-38

Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics 
Sub Title (in English)  
Keyword(1) metal gate  
Keyword(2) high-k gate dielectrics  
Keyword(3) pMISFET  
Keyword(4) Al2O3  
Keyword(5) flatband voltage  
Keyword(6) variation  
Keyword(7)  
Keyword(8)  
1st Author's Name Tetsu Morooka  
1st Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
2nd Author's Name Takeo Matsuki  
2nd Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
3rd Author's Name Nobuyuki Mise  
3rd Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
4th Author's Name Satoshi Kamiyama  
4th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
5th Author's Name Toshihide Nabatame  
5th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
6th Author's Name Takahisa Eimori  
6th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
7th Author's Name Yasuo Nara  
7th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
8th Author's Name Jiro Yugami  
8th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
9th Author's Name Kazuto Ikeda  
9th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
10th Author's Name Yuzuru Ohji  
10th Author's Affiliation Semiconductor Leading Edge Technologies (Selete)
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Speaker Author-1 
Date Time 2009-06-19 15:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-38 
Volume (vol) vol.109 
Number (no) no.87 
Page pp.67-70 
#Pages
Date of Issue 2009-06-12 (SDM) 


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