Paper Abstract and Keywords |
Presentation |
2009-06-19 15:10
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 Link to ES Tech. Rep. Archives: SDM2009-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (Vfb) shift and Vt variation, and clarified that process integration of gate dielectrics with the capping layer has a risk for additional Vt variation. However, we have found that higher temperature PDA process not only brings higher Vfb shift but also suppresses the Vt variation. High-temperature PDA also has a risk for EOT increase, but process combination of low-temperature annealing before Al2O3 deposition and high temperature PDA after Al2O3 deposition can suppress both the EOT increase and the Vt variation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
metal gate / high-k gate dielectrics / pMISFET / Al2O3 / flatband voltage / variation / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 87, SDM2009-38, pp. 67-70, June 2009. |
Paper # |
SDM2009-38 |
Date of Issue |
2009-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2009-38 Link to ES Tech. Rep. Archives: SDM2009-38 |
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