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Paper Abstract and Keywords
Presentation 2009-06-19 13:20
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33
Abstract (in Japanese) (See Japanese page) 
(in English) To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to establish high-k/Ge stacked structures robust against thermal annealing treatments and wet processes. Ge<sub>3</sub>N<sub>4</sub> is a promising candidate of an interfacial layer between high-k and Ge. In this study, we investigated formation processes of Ge<sub>3</sub>N<sub>4</sub> on Ge(001) surfaces by radial nitridation, and evaluated electrical properties of Pr-oxide/Ge<sub>3</sub>N<sub>4</sub>/Ge structure. Stoichiometric Ge<sub>3</sub>N<sub>4</sub> can be formed by the radical nitridation in a wide range of temperature from 50 to 600°C. Change in the nitridation temperature dependence of the saturated thickness suggests different dominant diffusion species. Leakage current densities of Au/Ge<sub>3</sub>N<sub>4</sub>/Ge MOS capacitors are minimized at a nitridation temperature of 300°C. When Pr-oxide/Ge<sub>3</sub>N<sub>4</sub>/Ge is formed by the radical nitridation and atomic-layer-deposition, Pr-oxynitride is formed at the Pr-oxide/Ge interface. Additionally, the interface state density in the Al/Pr-oxide/ Ge<sub>3</sub>N<sub>4</sub>/Ge capacitor is drastically reduced by forming gas annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge(001) / radical nitridation / Ge3N4 / high-k / Pr-oxide / X-ray photoelectron microscopy / interface state density /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-33, pp. 39-44, June 2009.
Paper # SDM2009-33 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-33

Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation 
Sub Title (in English)  
Keyword(1) Ge(001)  
Keyword(2) radical nitridation  
Keyword(3) Ge3N4  
Keyword(4) high-k  
Keyword(5) Pr-oxide  
Keyword(6) X-ray photoelectron microscopy  
Keyword(7) interface state density  
Keyword(8)  
1st Author's Name Kimihiko Kato  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Hiroki Kondo  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Mitsuo Sakashita  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Shigeaki Zaima  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2009-06-19 13:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-33 
Volume (vol) vol.109 
Number (no) no.87 
Page pp.39-44 
#Pages 6 
Date of Issue 2009-06-12 (SDM) 

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