講演抄録/キーワード |
講演名 |
2009-06-25 13:00
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET ○Tetsuo Endoh・Koji Sakui・Yukio Yasuda(Tohoku Univ./JST-CREST) ED2009-90 SDM2009-85 エレソ技報アーカイブへのリンク:ED2009-90 SDM2009-85 |
抄録 |
(和) |
The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the first time. It is made clear that M-Vertical MOSFET, in comparison with the conventional Single Pillar type (S-) Vertical MOSFET, achieve an increased driving current by more than 2 times, a nearly ideal S-factor, and a suppressed cutoff-leakage current by less than 1/60 by suppressing short channel effect and by suppressing the DIBL effect. Moreover, mechanisms of these improvements of the M-Vertical MOSFET are made clear. From all of the above, it is shown that M-Vertical MOSFET is a key device candidate for future high speed and low power LSI’s in the sub-10nm generation. |
(英) |
The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the first time. It is made clear that M-Vertical MOSFET, in comparison with the conventional Single Pillar type (S-) Vertical MOSFET, achieve an increased driving current by more than 2 times, a nearly ideal S-factor, and a suppressed cutoff-leakage current by less than 1/60 by suppressing short channel effect and by suppressing the DIBL effect. Moreover, mechanisms of these improvements of the M-Vertical MOSFET are made clear. From all of the above, it is shown that M-Vertical MOSFET is a key device candidate for future high speed and low power LSI’s in the sub-10nm generation. |
キーワード |
(和) |
縦型構造MOSFET / 3次元構造デバイス / MOSFET / LSI / / / / |
(英) |
Vertical MOSFET / 3D structured Device / MOSFET / LSI / / / / |
文献情報 |
信学技報, vol. 109, no. 98, SDM2009-85, pp. 173-176, 2009年6月. |
資料番号 |
SDM2009-85 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-90 SDM2009-85 エレソ技報アーカイブへのリンク:ED2009-90 SDM2009-85 |
|