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Paper Abstract and Keywords
Presentation 2009-06-25 13:15
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN
Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride semiconductor. Tb ions were implanted into Al0.35Ga0.65N epi-layers grown by OMVPE, and the dose were in the range of 1×1012 ~ 2.8×1016 Tb/cm2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×1014 Tb/cm2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×1013 Tb/cm2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×1013 Tb/cm2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low.
Keyword (in Japanese) (See Japanese page) 
(in English) Rare Earth / Terbium / AlGaN / Ion-Beam-Damage / III-nitride semiconductor / MOCVD / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-82, pp. 141-144, June 2009.
Paper # ED2009-82 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN 
Sub Title (in English)  
Keyword(1) Rare Earth  
Keyword(2) Terbium  
Keyword(3) AlGaN  
Keyword(4) Ion-Beam-Damage  
Keyword(5) III-nitride semiconductor  
Keyword(6) MOCVD  
Keyword(7)  
Keyword(8)  
1st Author's Name Ji-Ho Park  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
2nd Author's Name Hiroshi Okada  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
3rd Author's Name Akihiro Wakahara  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
4th Author's Name Yuzo Furukawa  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
5th Author's Name Yong-Tae Kim  
5th Author's Affiliation Dankook University (Dankook Univ.)
6th Author's Name Jonghan Song  
6th Author's Affiliation Korea Institute of Science and Technology (KIST)
7th Author's Name Ho-Jung Chang  
7th Author's Affiliation Dankook University (Dankook Univ.)
8th Author's Name Shin-ichiro Sato  
8th Author's Affiliation Japan Atomic Energy Agency (JAEA, Takasaki)
9th Author's Name Takeshi Ohshima  
9th Author's Affiliation Japan Atomic Energy Agency (JAEA, Takasaki)
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Speaker Author-1 
Date Time 2009-06-25 13:15:00 
Presentation Time 15 minutes 
Registration for ED 
Paper # ED2009-82, SDM2009-77 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.141-144 
#Pages 4 
Date of Issue 2009-06-17 (ED, SDM) 

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