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Paper Abstract and Keywords
Presentation 2009-06-25 12:00
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
Seiya Kasai (Hokkaido Univ./PRESTO JST), Tetsuya Asai, Yuta Shiratori, Daisuke Nakata (Hokkaido Univ.) ED2009-78 SDM2009-73
Abstract (in Japanese) (See Japanese page) 
(in English) Stochastic resonance phenomenon in GaAs-based nanowire field effect transistors (FETs) and their summing network is studied experimentally. Response to a weak signal of a nanowire FET operating in subthreshold region is enhanced by adding noise to gate. The response is further improved by forming a FET summing network and strong input-output correlation is obtained in wide noise voltage range. The effect of device variation in the network is also investigated and it is found to make the system respond the weak signal without tuning noise intensity.
Keyword (in Japanese) (See Japanese page) 
(in English) stochastic resonance / noise / FET / nanowire / network / GaAs / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-78, pp. 125-128, June 2009.
Paper # ED2009-78 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-78 SDM2009-73

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network 
Sub Title (in English)  
Keyword(1) stochastic resonance  
Keyword(2) noise  
Keyword(3) FET  
Keyword(4) nanowire  
Keyword(5) network  
Keyword(6) GaAs  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiya Kasai  
1st Author's Affiliation Hokkaido University/PRESTO JST (Hokkaido Univ./PRESTO JST)
2nd Author's Name Tetsuya Asai  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Yuta Shiratori  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Daisuke Nakata  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2009-06-25 12:00:00 
Presentation Time 15 minutes 
Registration for ED 
Paper # ED2009-78, SDM2009-73 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.125-128 
#Pages 4 
Date of Issue 2009-06-17 (ED, SDM) 

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