講演抄録/キーワード |
講演名 |
2009-06-26 11:45
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot ○Masakazu Muraguchi(Tohoku Univ.)・Yukihiro Takada・Shintaro Nomura(Univ. of Tsukuba.)・Tetsuo Endoh(Tohoku Univ.)・Kenji Shiraishi(Univ. of Tsukuba.) ED2009-93 SDM2009-88 エレソ技報アーカイブへのリンク:ED2009-93 SDM2009-88 |
抄録 |
(和) |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in nano-electronic devices. We have theoretically investigated the time-evolution of electron transport from a two-dimensional electron gas (2DEG) to a quantum dot (QD), where 2DEG represents the electrode in the nano-electronic devices. We clearly showed that the coherent electron transport is remarkably modified depending on the initial electronic state in the 2DEG. The electron transport from the 2DEG to the QD is strongly enhanced, when the initial state of the electron in the 2DEG is localized below the QD. We have proposed that controlling the electronic state in the electrodes could realize a new concept device function without modifying the electrode structures; that achieves a new controllable state in future nano-electronic devices. |
(英) |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in nano-electronic devices. We have theoretically investigated the time-evolution of electron transport from a two-dimensional electron gas (2DEG) to a quantum dot (QD), where 2DEG represents the electrode in the nano-electronic devices. We clearly showed that the coherent electron transport is remarkably modified depending on the initial electronic state in the 2DEG. The electron transport from the 2DEG to the QD is strongly enhanced, when the initial state of the electron in the 2DEG is localized below the QD. We have proposed that controlling the electronic state in the electrodes could realize a new concept device function without modifying the electrode structures; that achieves a new controllable state in future nano-electronic devices. |
キーワード |
(和) |
直接トンネル / 二次元電子ガス / 電子ダイナミクス / ナノドット / ナノコンタクト / 電極 / / |
(英) |
Direct Tunneling / Two-Dimensional Electron Gas / Electron Dynamics / Nano-Dot / Nano-Contact / Electrode / / |
文献情報 |
信学技報, vol. 109, no. 98, SDM2009-88, pp. 185-188, 2009年6月. |
資料番号 |
SDM2009-88 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-93 SDM2009-88 エレソ技報アーカイブへのリンク:ED2009-93 SDM2009-88 |