Paper Abstract and Keywords |
Presentation |
2009-07-16 15:50
The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23 Link to ES Tech. Rep. Archives: SDM2009-107 ICD2009-23 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. Ion components are analyzed in terms of Ns, inj and SCE in Lg=25nm devices for the first time. As a result, it is clarified that the aggressive Tinv scaling can achieve the performance improvement even if  degradation occurs in some degree, because  impact decreases with Lg and Tinv scaling impact becomes strong. Furthermore, we have introduced the effective Tinv scaling (novel SiON) process and demonstrated its excellent device performance (Ion=1mA/m @Ioff=100nA/m, Lg=25nm, Vdd=1.0V, Avt=1.8mVm, Tinv=1.13nm, without any performance booster technology). |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOSFET scaling / Tinv / Carrier mobility / DIBL / high-k dielectric / Metal gate electrode / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 133, SDM2009-107, pp. 53-56, July 2009. |
Paper # |
SDM2009-107 |
Date of Issue |
2009-07-09 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2009-107 ICD2009-23 Link to ES Tech. Rep. Archives: SDM2009-107 ICD2009-23 |
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