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Paper Abstract and Keywords
Presentation 2009-07-31 09:50
C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT
Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high power amplifier, which features high efficiency C-Ku band 120% relative bandwidth. It was found that, output impedance of a transistor under high efficiency operation can be modeled by parallel circuit of R and C. In the circuit design, BPF (Band Pass Filter) configuration is employed. Parasitic capacitance of the transistor is utilized as a part of BPF matching circuit. Hence broadband matching was successfully obtained.
A C-Ku band GaN HEMT HIC amplifier was manufactured and measured at 30V drain voltage. More than 4W output power and 18% PAE (Power Added Efficiency) were obtained at 120% relative bandwidth. This result is state of the art at high efficiency GaN HEMT HIC amplifier with more than 100% relative bandwidth.
Keyword (in Japanese) (See Japanese page) 
(in English) Broadband amplifiers / GaN HEMT / power amplifier / microwave / band width / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 158, MW2009-68, pp. 205-209, July 2009.
Paper # MW2009-68 
Date of Issue 2009-07-23 (MW, OPE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2009-68 OPE2009-68

Conference Information
Committee OPE EMT MW  
Conference Date 2009-07-30 - 2009-07-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Asahikawa Civic Culture Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave photonics / NA 
Paper Information
Registration To MW 
Conference Code 2009-07-OPE-EMT-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT 
Sub Title (in English)  
Keyword(1) Broadband amplifiers  
Keyword(2) GaN HEMT  
Keyword(3) power amplifier  
Keyword(4) microwave  
Keyword(5) band width  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Eigo Kuwata  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi electric corp)
2nd Author's Name Koji Yamanaka  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi electric corp)
3rd Author's Name Tasuku Kirikoshi  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi electric corp)
4th Author's Name Akira Inoue  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi electric corp)
5th Author's Name Yoshihito Hirano  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi electric corp)
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Speaker Author-1 
Date Time 2009-07-31 09:50:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2009-68, OPE2009-68 
Volume (vol) vol.109 
Number (no) no.158(MW), no.159(OPE) 
Page pp.205-209 
#Pages 5 
Date of Issue 2009-07-23 (MW, OPE) 

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