Paper Abstract and Keywords |
Presentation |
2009-07-31 09:50
C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 Link to ES Tech. Rep. Archives: MW2009-68 OPE2009-68 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high power amplifier, which features high efficiency C-Ku band 120% relative bandwidth. It was found that, output impedance of a transistor under high efficiency operation can be modeled by parallel circuit of R and C. In the circuit design, BPF (Band Pass Filter) configuration is employed. Parasitic capacitance of the transistor is utilized as a part of BPF matching circuit. Hence broadband matching was successfully obtained.
A C-Ku band GaN HEMT HIC amplifier was manufactured and measured at 30V drain voltage. More than 4W output power and 18% PAE (Power Added Efficiency) were obtained at 120% relative bandwidth. This result is state of the art at high efficiency GaN HEMT HIC amplifier with more than 100% relative bandwidth. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Broadband amplifiers / GaN HEMT / power amplifier / microwave / band width / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 158, MW2009-68, pp. 205-209, July 2009. |
Paper # |
MW2009-68 |
Date of Issue |
2009-07-23 (MW, OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MW2009-68 OPE2009-68 Link to ES Tech. Rep. Archives: MW2009-68 OPE2009-68 |
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