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Paper Abstract and Keywords
Presentation 2009-09-25 14:50
Design and Fabrication for a GaN HEMT Microwave Doherty Power Amplifier with a Series Connected Load
Satoshi Kawai, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2009-85
Abstract (in Japanese) (See Japanese page) 
(in English) Doherty amplifiers are expected as a high-efficiency microwave power amplifier at a wide dynamic range. Doherty introduced two types of concepts for high-efficiency amplifiers in 1939. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We proposed a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output powers, the amplifier realized improved power efficiencies of 31% and 56%, respectively, compared to power efficiencies of 15% at 24 dBm output powers and 78% at 34 dBm saturated powers, respectively, obtained with a reference push-pull amplifier.
Keyword (in Japanese) (See Japanese page) 
(in English) Doherty amplifier / series connected load type / microwave power amplifiers / GaN HEMT / balun / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 210, MW2009-85, pp. 67-72, Sept. 2009.
Paper # MW2009-85 
Date of Issue 2009-09-18 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW  
Conference Date 2009-09-25 - 2009-09-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Electro-Communications 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2009-09-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design and Fabrication for a GaN HEMT Microwave Doherty Power Amplifier with a Series Connected Load 
Sub Title (in English)  
Keyword(1) Doherty amplifier  
Keyword(2) series connected load type  
Keyword(3) microwave power amplifiers  
Keyword(4) GaN HEMT  
Keyword(5) balun  
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Keyword(7)  
Keyword(8)  
1st Author's Name Satoshi Kawai  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2009-09-25 14:50:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2009-85 
Volume (vol) vol.109 
Number (no) no.210 
Page pp.67-72 
#Pages 6 
Date of Issue 2009-09-18 (MW) 

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