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Paper Abstract and Keywords
Presentation 2009-11-13 13:00
[Tutorial Invited Lecture] Possible Performance of SOI Devices, their Potentiality and Prospects -- Past Constraint and Current Issues --
Yasuhisa Omura (Kansai Univ.) SDM2009-146 Link to ES Tech. Rep. Archives: SDM2009-146
Abstract (in Japanese) (See Japanese page) 
(in English) This report summarizes the present stage of SOI MOSFET technology and the aim and prospect of 3-D scaled MOSFET technology from practical data and analytical models developed in the last 50-year-history of SOI technology. When current device parameters are requested for the circuit design, recent sophisticated mathematical techniques (such as the 1st principle calculations) are not always solicited, but physical modeling of some important physical parameters, such as mobility and lifetimes, will promise sufficiently reliable predictions of circuit performance on the basis of the conventional semi-classical techniques.
Keyword (in Japanese) (See Japanese page) 
(in English) SOI MOSFET / modeling / circuit simulations / physical parameters / scaling / quantum effects / strained effects / mobility  
Reference Info. IEICE Tech. Rep., vol. 109, no. 278, SDM2009-146, pp. 61-66, Nov. 2009.
Paper # SDM2009-146 
Date of Issue 2009-11-05 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-146 Link to ES Tech. Rep. Archives: SDM2009-146

Conference Information
Committee SDM  
Conference Date 2009-11-12 - 2009-11-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2009-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Possible Performance of SOI Devices, their Potentiality and Prospects 
Sub Title (in English) Past Constraint and Current Issues 
Keyword(1) SOI MOSFET  
Keyword(2) modeling  
Keyword(3) circuit simulations  
Keyword(4) physical parameters  
Keyword(5) scaling  
Keyword(6) quantum effects  
Keyword(7) strained effects  
Keyword(8) mobility  
1st Author's Name Yasuhisa Omura  
1st Author's Affiliation Kansai University (Kansai Univ.)
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Speaker Author-1 
Date Time 2009-11-13 13:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2009-146 
Volume (vol) vol.109 
Number (no) no.278 
Page pp.61-66 
#Pages
Date of Issue 2009-11-05 (SDM) 


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