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Paper Abstract and Keywords
Presentation 2009-11-19 14:20
Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations
Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117
Abstract (in Japanese) (See Japanese page) 
(in English) In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in the covalent radius between In and N atoms. We consider atomic and electronic structures of N mono-vacancies (VN) in InGaN in detail by the first principles calculations. We find that the second nearest neighbor In-In interactions, which are not important in conventional semiconductors such as Si and InAs, are as crucial the nearest neighbor In-N interaction in In-related nitride semiconductors. Moreover, we clearly show that the strong second nearest neighbor In-In interactions in InN are the physical origin of the unusually narrow band gap of InN
Keyword (in Japanese) (See Japanese page) 
(in English) In-containing nitride semiconductors, / Covalency / Iconicity / First-Principles Calculations / Theory / Band structures, / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 290, LQE2009-117, pp. 47-50, Nov. 2009.
Paper # LQE2009-117 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-138 CPM2009-112 LQE2009-117

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations 
Sub Title (in English)  
Keyword(1) In-containing nitride semiconductors,  
Keyword(2) Covalency  
Keyword(3) Iconicity  
Keyword(4) First-Principles Calculations  
Keyword(5) Theory  
Keyword(6) Band structures,  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenji Shiraishi  
1st Author's Affiliation University of Tsukuba/CREST, Japan Science and Technology Agency (Univ. of Tsukuba/JST)
2nd Author's Name Jun-ichi Iwata  
2nd Author's Affiliation University of Tsukuba/CREST, Japan Science and Technology Agency (Univ. of Tsukuba/JST)
3rd Author's Name Teruaki Obata  
3rd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
4th Author's Name Atsushi Oshiyama  
4th Author's Affiliation The University. of Tokyo/CREST, Japan Science and Technology Agency (Univ. of Tokyo/JST)
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Speaker Author-1 
Date Time 2009-11-19 14:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2009-138, CPM2009-112, LQE2009-117 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.47-50 
#Pages 4 
Date of Issue 2009-11-12 (ED, CPM, LQE) 

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