Paper Abstract and Keywords |
Presentation |
2009-11-19 09:00
GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima) ED2009-128 CPM2009-102 LQE2009-107 Link to ES Tech. Rep. Archives: ED2009-128 CPM2009-102 LQE2009-107 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Two step growth of GaN is performed, and the metal which is selectively sandwiched into GaN is formed. A GaN downward is etched away when Ta is selectively there. The mechanism is that TaN is formed at high temperature and separate into two, Ta and N2 gas. TaN is again formed, and the rest is in the same way. The usefulness of this technique is the use of the reflectance layer for the UV-LED which emits shorter than 370 nm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / tantalum(Ta) / etching / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-107, pp. 1-4, Nov. 2009. |
Paper # |
LQE2009-107 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-128 CPM2009-102 LQE2009-107 Link to ES Tech. Rep. Archives: ED2009-128 CPM2009-102 LQE2009-107 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
tantalum(Ta) |
Keyword(3) |
etching |
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1st Author's Name |
Kohei Hara |
1st Author's Affiliation |
The University of Tokushima (Univ. of Tokushima) |
2nd Author's Name |
Yoshiki Naoi |
2nd Author's Affiliation |
The University of Tokushima (Univ. of Tokushima) |
3rd Author's Name |
Shiro Sakai |
3rd Author's Affiliation |
The University of Tokushima (Univ. of Tokushima) |
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Speaker |
Author-1 |
Date Time |
2009-11-19 09:00:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2009-128, CPM2009-102, LQE2009-107 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
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