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| Presentation | 2009-11-20 09:55 High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K) Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso)  ED2009-148 CPM2009-122 LQE2009-127 Link to ES Tech. Rep. Archives: ED2009-148 CPM2009-122 LQE2009-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have developed a multiwafer MOVPE reactor with a capacity of eleven 4 inch wafers(UR25K). In order to shorten the growth time of GaN-based devices, we have grown GaN at 10$\micro\m/h under atmospheric pressure using UR25K. The full width at half maximum values of the X-ray diffraction rocking curve for the (0002) and (10-12) directions were 200 arcsec and 260 arcsec, respectively. The residual carbon concentration was 2.5 × 1016 cm-3. We have grown two samples of simple blue-LED structure. The n-GaN growth rates of the samples were 3.6$\micro\m/h and 10$\micro$m/h, respectively. Electroluminescence characteristics of the two were almost the same level. These results indicate that the high rate growth of GaN using UR25K can contribute to shortening the growth time of GaN-based devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOVPE / multiwafer MOVPE / high rate growth / GaN / LED / parasitic reaction / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 288, ED2009-148, pp. 95-98, Nov. 2009. | |
| Paper # | ED2009-148 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-148 CPM2009-122 LQE2009-127 Link to ES Tech. Rep. Archives: ED2009-148 CPM2009-122 LQE2009-127 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K) |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | multiwafer MOVPE |
| Keyword(3) | high rate growth |
| Keyword(4) | GaN |
| Keyword(5) | LED |
| Keyword(6) | parasitic reaction |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshiki Yano |
| 1st Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 2nd Author's Name | Kazutada Ikenaga |
| 2nd Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 3rd Author's Name | Hiroki Tokunaga |
| 3rd Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 4th Author's Name | Jun Yamamoto |
| 4th Author's Affiliation | TN EMC LTD. (TN EMC) |
| 5th Author's Name | Toshiya Tabuchi |
| 5th Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 6th Author's Name | Kousuke Uchiyama |
| 6th Author's Affiliation | TN EMC LTD. (TN EMC) |
| 7th Author's Name | Akira Yamaguchi |
| 7th Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 8th Author's Name | Yasushi Fukuda |
| 8th Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 9th Author's Name | Akinori Ubukata |
| 9th Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
| 10th Author's Name | Yasuhiro Harada |
| 10th Author's Affiliation | TN EMC LTD. (TN EMC) |
| 11th Author's Name | Yuzaburo Ban |
| 11th Author's Affiliation | TN EMC LTD. (TN EMC) |
| 12th Author's Name | Koh Matsumoto |
| 12th Author's Affiliation | TN EMC LTD. (TN EMC) |
| 13th Author's Name | Toshiaki Yamazaki |
| 13th Author's Affiliation | Taiyo Nippon Sanso Corporation (Taiyo Nippon Sanso) |
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| 14th Author's Affiliation | () |
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| 15th Author's Affiliation | () |
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| 16th Author's Affiliation | () |
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| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2009-11-20 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-148, CPM2009-122, LQE2009-127 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.95-98 |
| #Pages | 4 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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