Paper Abstract and Keywords |
Presentation |
2009-11-20 14:00
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2009-155 CPM2009-129 LQE2009-134 Link to ES Tech. Rep. Archives: ED2009-155 CPM2009-129 LQE2009-134 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have studied the breakdown characteristics of thick AlGaN/GaN HEMTs on Si substrate with multilayer structure. The breakdown voltage shows a linear increase with the total thickness of epitaxial layer and a breakdown as high as 1089 V is achieved for the thickness of 5.5 um. However, the breakdown value decreases when pits appear at surface even for thick epilayers. For a certain thickness, the breakdown values decreased as the density of pit increased. The TEM and SEM cross-section images revealed that the pits originated from silicon substrate induced by Ga etching Si substrate at high growth temperatures. The three terminal-off breakdown voltage and electron mobility of the HEMTs decreased rapidly as the density of the pit increased. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si substrate / GaN / AlGaN/GaN / MOCVD / HEMT / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 288, ED2009-155, pp. 129-132, Nov. 2009. |
Paper # |
ED2009-155 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-155 CPM2009-129 LQE2009-134 Link to ES Tech. Rep. Archives: ED2009-155 CPM2009-129 LQE2009-134 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates |
Sub Title (in English) |
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Keyword(1) |
Si substrate |
Keyword(2) |
GaN |
Keyword(3) |
AlGaN/GaN |
Keyword(4) |
MOCVD |
Keyword(5) |
HEMT |
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1st Author's Name |
Takaaki Suzue |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Lawrence Selvaraj |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Takashi Egawa |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2009-11-20 14:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2009-155, CPM2009-129, LQE2009-134 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.129-132 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
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