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Paper Abstract and Keywords
Presentation 2009-11-20 14:00
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates
Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2009-155 CPM2009-129 LQE2009-134
Abstract (in Japanese) (See Japanese page) 
(in English) We have studied the breakdown characteristics of thick AlGaN/GaN HEMTs on Si substrate with multilayer structure. The breakdown voltage shows a linear increase with the total thickness of epitaxial layer and a breakdown as high as 1089 V is achieved for the thickness of 5.5 um. However, the breakdown value decreases when pits appear at surface even for thick epilayers. For a certain thickness, the breakdown values decreased as the density of pit increased. The TEM and SEM cross-section images revealed that the pits originated from silicon substrate induced by Ga etching Si substrate at high growth temperatures. The three terminal-off breakdown voltage and electron mobility of the HEMTs decreased rapidly as the density of the pit increased.
Keyword (in Japanese) (See Japanese page) 
(in English) Si substrate / GaN / AlGaN/GaN / MOCVD / HEMT / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 288, ED2009-155, pp. 129-132, Nov. 2009.
Paper # ED2009-155 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-155 CPM2009-129 LQE2009-134

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High breakdown voltage of AlGaN/GaN HEMTs on Si substrates 
Sub Title (in English)  
Keyword(1) Si substrate  
Keyword(2) GaN  
Keyword(3) AlGaN/GaN  
Keyword(4) MOCVD  
Keyword(5) HEMT  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takaaki Suzue  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Lawrence Selvaraj  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2009-11-20 14:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-155, CPM2009-129, LQE2009-134 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.129-132 
#Pages 4 
Date of Issue 2009-11-12 (ED, CPM, LQE) 

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