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Paper Abstract and Keywords
Presentation 2009-11-20 10:55
Variation of surface properties in Mg-doped GaN
Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST) ED2009-150 CPM2009-124 LQE2009-129 Link to ES Tech. Rep. Archives: ED2009-150 CPM2009-124 LQE2009-129
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated chemical, electrical and optical properties of Mg-doped GaN surfaces subjected to a high-temperature anneal. X-ray photoelectron spectroscopy (XPS) showed that Ga2p peaks were clearly detected at the SiO2/p-GaN surface after the annealing at 1000 oC, in addition to the Si and O peaks originating from SiO2surface. This indicated that the out-diffusion of Ga atom was induced by high-temperature anneal. After removing the SiO2 film, we found a significant segregation of Mg atoms near the p-GaN surface with the Mg-doping of 1x1019cm-3. For the as-grown sample with the Mg-doping of 2x1019cm-3, a broad PL peak at around 3.1eV was detected in addition to a weak band-edge emission. After the annealing, a new peak appeared at around 2.8 eV, of which the peak position is very close to the so-called blue luminescence (BL) often observed in the highly Mg-doped GaN. On the other hand, different PL spectra were observed for the sample with the Mg-doping of 3x1018cm-3 before and after the annealing, indicating that the formation of deep level is dependent on the Mg density and annealing condition.
Keyword (in Japanese) (See Japanese page) 
(in English) Mg-doped GaN / Ga vacancy / Mg accumulation / Deep level / XPS / PL / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 288, ED2009-150, pp. 105-108, Nov. 2009.
Paper # ED2009-150 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-150 CPM2009-124 LQE2009-129 Link to ES Tech. Rep. Archives: ED2009-150 CPM2009-124 LQE2009-129

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Variation of surface properties in Mg-doped GaN 
Sub Title (in English)  
Keyword(1) Mg-doped GaN  
Keyword(2) Ga vacancy  
Keyword(3) Mg accumulation  
Keyword(4) Deep level  
Keyword(5) XPS  
Keyword(6) PL  
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Keyword(8)  
1st Author's Name Eri Ogawa  
1st Author's Affiliation Hokkaido University/CREST-JST (Hokkaido Univ./JST)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Hokkaido University/CREST-JST (Hokkaido Univ./JST)
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Speaker Author-1 
Date Time 2009-11-20 10:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-150, CPM2009-124, LQE2009-129 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.105-108 
#Pages
Date of Issue 2009-11-12 (ED, CPM, LQE) 


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