Paper Abstract and Keywords |
Presentation |
2009-11-20 10:55
Variation of surface properties in Mg-doped GaN Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST) ED2009-150 CPM2009-124 LQE2009-129 Link to ES Tech. Rep. Archives: ED2009-150 CPM2009-124 LQE2009-129 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated chemical, electrical and optical properties of Mg-doped GaN surfaces subjected to a high-temperature anneal. X-ray photoelectron spectroscopy (XPS) showed that Ga2p peaks were clearly detected at the SiO2/p-GaN surface after the annealing at 1000 oC, in addition to the Si and O peaks originating from SiO2surface. This indicated that the out-diffusion of Ga atom was induced by high-temperature anneal. After removing the SiO2 film, we found a significant segregation of Mg atoms near the p-GaN surface with the Mg-doping of 1x1019cm-3. For the as-grown sample with the Mg-doping of 2x1019cm-3, a broad PL peak at around 3.1eV was detected in addition to a weak band-edge emission. After the annealing, a new peak appeared at around 2.8 eV, of which the peak position is very close to the so-called blue luminescence (BL) often observed in the highly Mg-doped GaN. On the other hand, different PL spectra were observed for the sample with the Mg-doping of 3x1018cm-3 before and after the annealing, indicating that the formation of deep level is dependent on the Mg density and annealing condition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Mg-doped GaN / Ga vacancy / Mg accumulation / Deep level / XPS / PL / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 288, ED2009-150, pp. 105-108, Nov. 2009. |
Paper # |
ED2009-150 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-150 CPM2009-124 LQE2009-129 Link to ES Tech. Rep. Archives: ED2009-150 CPM2009-124 LQE2009-129 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Variation of surface properties in Mg-doped GaN |
Sub Title (in English) |
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Keyword(1) |
Mg-doped GaN |
Keyword(2) |
Ga vacancy |
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Mg accumulation |
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Deep level |
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XPS |
Keyword(6) |
PL |
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1st Author's Name |
Eri Ogawa |
1st Author's Affiliation |
Hokkaido University/CREST-JST (Hokkaido Univ./JST) |
2nd Author's Name |
Tamotsu Hashizume |
2nd Author's Affiliation |
Hokkaido University/CREST-JST (Hokkaido Univ./JST) |
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Speaker |
Author-1 |
Date Time |
2009-11-20 10:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2009-150, CPM2009-124, LQE2009-129 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.105-108 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
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