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Paper Abstract and Keywords
Presentation 2009-12-04 14:30
Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate
Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.) SDM2009-163
Abstract (in Japanese) (See Japanese page) 
(in English) Gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-reliability, and high-efficiency TFTs and solar cells. In this study, the gettering of large-grained thin poly-Si films with a thickness of 100 nm and with Ni impurities was studied. A large-grained Ni-doped thin poly-Si film was fabricated on a glass substrate by Ni-induced solid phase crystallization (Ni-SPC) followed by continuous-wave (CW) green laser recrystallization. The behavior of Ni impurities in the large-grained thin poly-Si film was evaluated by scanning transmission electron microscopy (STEM), STEM energy-dispersive X-ray spectroscopy (STEM-EDX), and electron diffraction (ED). It was observed that Ni stabilized through the formation of Ni-disilicide (NiSi2) at the triple junction during the low-temperature device-fabrication process.
Keyword (in Japanese) (See Japanese page) 
(in English) poly-Si / solar cell / gettering / TFT / impurities / silicide / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 321, SDM2009-163, pp. 63-65, Dec. 2009.
Paper # SDM2009-163 
Date of Issue 2009-11-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-12-04 - 2009-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication, Evaluation for Si Related Materials, 
Paper Information
Registration To SDM 
Conference Code 2009-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate 
Sub Title (in English)  
Keyword(1) poly-Si  
Keyword(2) solar cell  
Keyword(3) gettering  
Keyword(4) TFT  
Keyword(5) impurities  
Keyword(6) silicide  
Keyword(7)  
Keyword(8)  
1st Author's Name Akito Hara  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Tsutomu Sato  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-1 
Date Time 2009-12-04 14:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-163 
Volume (vol) vol.109 
Number (no) no.321 
Page pp.63-65 
#Pages 3 
Date of Issue 2009-11-27 (SDM) 

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