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Paper Abstract and Keywords
Presentation 2009-12-04 10:00
Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-153
Abstract (in Japanese) (See Japanese page) 
(in English) In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were evaluated by FCCS using the temperature-dependent hole concentration obtained by Hall-effect measurements in the van der pauw configuration. Then, the density of Al acceptors was found to be significantly reduced by electron irradiation. To investigate the origin of this phenomenon, we discuss the changes of acceptor densities and defects in Al-doped 6H-SiC epilayers irradiated with 100 keV electrons.
Keyword (in Japanese) (See Japanese page) 
(in English) 6H-SiC / Al-doped SiC / p-type SiC / Electron irradiation / Reduction in hole concentration / Decrease in acceptor density / Intrinsic defects /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 321, SDM2009-153, pp. 11-16, Dec. 2009.
Paper # SDM2009-153 
Date of Issue 2009-11-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-153

Conference Information
Committee SDM  
Conference Date 2009-12-04 - 2009-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication, Evaluation for Si Related Materials, 
Paper Information
Registration To SDM 
Conference Code 2009-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion 
Sub Title (in English)  
Keyword(1) 6H-SiC  
Keyword(2) Al-doped SiC  
Keyword(3) p-type SiC  
Keyword(4) Electron irradiation  
Keyword(5) Reduction in hole concentration  
Keyword(6) Decrease in acceptor density  
Keyword(7) Intrinsic defects  
Keyword(8)  
1st Author's Name Takunori Nojiri  
1st Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Comm Univ)
2nd Author's Name Hideki Yanagisawa  
2nd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Comm Univ)
3rd Author's Name Yosiko Myojin  
3rd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Comm Univ)
4th Author's Name Hideharu Matsuura  
4th Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Comm Univ)
5th Author's Name Takeshi Ohshima  
5th Author's Affiliation Japan Atomic Energy Agency (JAEA)
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Speaker Author-1 
Date Time 2009-12-04 10:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-153 
Volume (vol) vol.109 
Number (no) no.321 
Page pp.11-16 
#Pages 6 
Date of Issue 2009-11-27 (SDM) 

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