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Paper Abstract and Keywords
Presentation 2009-12-04 16:30
Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-168
Abstract (in Japanese) (See Japanese page) 
(in English) Nickel Oxide (NiO), known as non-stoichiometric compound, is expected as a candidate of ReRAM because of its resistive switching characteristics. In this study, Pt/NiO/Pt stack structures with various NiO composition were fabricated and were investigated their electrical characteristics. Compositions are the more distant form stoichiometry, NiO thin films have the less resistance in initial states (RIni), and NiO thin films with RIni of about 10 $\Omega$ show no resistive switching behavior. In the temperature range from 297K to 573K, resistive switching characteristics were also examined about the samples with different three NiO compositions: Ni-rich, Stoichiometry, and O-rich. Temperature dependence of RIni was dependent on NiO compositions, and resistive switching behaviors weren’t observed in samples with low RIni. In the same samples, RIni also differed between before and after the thermal treatment. These are because NiO compositions varied during the thermal treatments. Therefore, optimum NiO composition may exist for stable resistive switching behaviors.
Keyword (in Japanese) (See Japanese page) 
(in English) NiO / ReRAM / chemical composition / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 321, SDM2009-168, pp. 89-92, Dec. 2009.
Paper # SDM2009-168 
Date of Issue 2009-11-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-12-04 - 2009-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication, Evaluation for Si Related Materials, 
Paper Information
Registration To SDM 
Conference Code 2009-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM 
Sub Title (in English)  
Keyword(1) NiO  
Keyword(2) ReRAM  
Keyword(3) chemical composition  
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1st Author's Name Tatsuya Iwata  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Yusuke Nishi  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Tsunenobu Kimoto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2009-12-04 16:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-168 
Volume (vol) vol.109 
Number (no) no.321 
Page pp.89-92 
#Pages 4 
Date of Issue 2009-11-27 (SDM) 

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