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Paper Abstract and Keywords
Presentation 2009-12-18 16:40
Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode
Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo.), Seiichi Itabashi (NTT) OPE2009-169
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge photodiode exhibits low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. Si VOA also shows efficient light attenuation, as the injection current increases. Furthermore, the Ge photodiode shows approximately 1 GHz of 3-dB cut-off frequency while fall and rise time of Si VOAs are few nanoseconds. These dynamic properties ensure synchronized operation between Si VOA and Ge photodiode at 100 MHz. Such a device configuration, consisting of a tapping splitter, a Ge photodiode as a monitoring detector, and a Si VOA is useful for a signal equalization application in burst-mode optical communication.
Keyword (in Japanese) (See Japanese page) 
(in English) Si VOA / Ge photodiode / Monolithic integration / Synchronized operation / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 353, OPE2009-169, pp. 47-52, Dec. 2009.
Paper # OPE2009-169 
Date of Issue 2009-12-11 (OPE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OPE  
Conference Date 2009-12-18 - 2009-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2009-12-OPE 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode 
Sub Title (in English)  
Keyword(1) Si VOA  
Keyword(2) Ge photodiode  
Keyword(3) Monolithic integration  
Keyword(4) Synchronized operation  
Keyword(5)  
Keyword(6)  
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1st Author's Name Sungbong Park  
1st Author's Affiliation NTT corp. (NTT)
2nd Author's Name Tai Tsuchizawa  
2nd Author's Affiliation NTT corp. (NTT)
3rd Author's Name Toshifumi Watanabe  
3rd Author's Affiliation NTT corp. (NTT)
4th Author's Name Hiroyuki Shinojima  
4th Author's Affiliation NTT corp. (NTT)
5th Author's Name Hidetaka Nishi  
5th Author's Affiliation NTT corp. (NTT)
6th Author's Name Koji Yamada  
6th Author's Affiliation NTT corp. (NTT)
7th Author's Name Yasuhiko Ishikawa  
7th Author's Affiliation The University of Tokyo (Univ. of Tokyo.)
8th Author's Name Kazumi Wada  
8th Author's Affiliation The University of Tokyo (Univ. of Tokyo.)
9th Author's Name Seiichi Itabashi  
9th Author's Affiliation NTT corp. (NTT)
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Speaker Author-1 
Date Time 2009-12-18 16:40:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OPE2009-169 
Volume (vol) vol.109 
Number (no) no.353 
Page pp.47-52 
#Pages
Date of Issue 2009-12-11 (OPE) 


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