| Paper Abstract and Keywords |
| Presentation |
2009-12-18 16:40
Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo.), Seiichi Itabashi (NTT) OPE2009-169 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge photodiode exhibits low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. Si VOA also shows efficient light attenuation, as the injection current increases. Furthermore, the Ge photodiode shows approximately 1 GHz of 3-dB cut-off frequency while fall and rise time of Si VOAs are few nanoseconds. These dynamic properties ensure synchronized operation between Si VOA and Ge photodiode at 100 MHz. Such a device configuration, consisting of a tapping splitter, a Ge photodiode as a monitoring detector, and a Si VOA is useful for a signal equalization application in burst-mode optical communication. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Si VOA / Ge photodiode / Monolithic integration / Synchronized operation / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 109, no. 353, OPE2009-169, pp. 47-52, Dec. 2009. |
| Paper # |
OPE2009-169 |
| Date of Issue |
2009-12-11 (OPE) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
OPE2009-169 |
| Conference Information |
| Committee |
OPE |
| Conference Date |
2009-12-18 - 2009-12-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
|
| Paper Information |
| Registration To |
OPE |
| Conference Code |
2009-12-OPE |
| Language |
English (Japanese title is available) |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode |
| Sub Title (in English) |
|
| Keyword(1) |
Si VOA |
| Keyword(2) |
Ge photodiode |
| Keyword(3) |
Monolithic integration |
| Keyword(4) |
Synchronized operation |
| Keyword(5) |
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| Keyword(6) |
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| 1st Author's Name |
Sungbong Park |
| 1st Author's Affiliation |
NTT corp. (NTT) |
| 2nd Author's Name |
Tai Tsuchizawa |
| 2nd Author's Affiliation |
NTT corp. (NTT) |
| 3rd Author's Name |
Toshifumi Watanabe |
| 3rd Author's Affiliation |
NTT corp. (NTT) |
| 4th Author's Name |
Hiroyuki Shinojima |
| 4th Author's Affiliation |
NTT corp. (NTT) |
| 5th Author's Name |
Hidetaka Nishi |
| 5th Author's Affiliation |
NTT corp. (NTT) |
| 6th Author's Name |
Koji Yamada |
| 6th Author's Affiliation |
NTT corp. (NTT) |
| 7th Author's Name |
Yasuhiko Ishikawa |
| 7th Author's Affiliation |
The University of Tokyo (Univ. of Tokyo.) |
| 8th Author's Name |
Kazumi Wada |
| 8th Author's Affiliation |
The University of Tokyo (Univ. of Tokyo.) |
| 9th Author's Name |
Seiichi Itabashi |
| 9th Author's Affiliation |
NTT corp. (NTT) |
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| Speaker |
Author-1 |
| Date Time |
2009-12-18 16:40:00 |
| Presentation Time |
25 minutes |
| Registration for |
OPE |
| Paper # |
OPE2009-169 |
| Volume (vol) |
vol.109 |
| Number (no) |
no.353 |
| Page |
pp.47-52 |
| #Pages |
6 |
| Date of Issue |
2009-12-11 (OPE) |