Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-01-12 16:05
Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method
Takahiro Fujii (Chiba Univ.), Hiroyuki Matsui (AIST), Tatsuo Hasegawa (AIST/Univ. of Tokyo), Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ.) OME2009-76
Abstract (in Japanese) (See Japanese page) 
(in English) Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the characteristics and stability of OTFTs. We have been quantitatively studying the density of interface trap states using an originally developed instrument for in-situ field-effect thermally-stimulated-current (FE-TSC) method which enables us to characterize the trap states without exposing the sample to the air. By this instrument, the density of trap states at pure pentacene/gate insulator interface has been estimated. The results indicated the existence of an isolated trap state at 70-100 meV above pentacene-HOMO-edge, of which energy was insensitive to the chemical structure of the gate insulator surface.
Keyword (in Japanese) (See Japanese page) 
(in English) pentacene / organic thin-film transistor / interface trap state / thermally stimulated current method / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 359, OME2009-76, pp. 51-56, Jan. 2010.
Paper # OME2009-76 
Date of Issue 2010-01-05 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2009-76

Conference Information
Committee OME  
Conference Date 2010-01-12 - 2010-01-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sensor, device, etc. 
Paper Information
Registration To OME 
Conference Code 2010-01-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method 
Sub Title (in English)  
Keyword(1) pentacene  
Keyword(2) organic thin-film transistor  
Keyword(3) interface trap state  
Keyword(4) thermally stimulated current method  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takahiro Fujii  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Hiroyuki Matsui  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Tatsuo Hasegawa  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology/University of Tokyo (AIST/Univ. of Tokyo)
4th Author's Name Shigekazu Kuniyoshi  
4th Author's Affiliation Chiba University (Chiba Univ.)
5th Author's Name Masatoshi Sakai  
5th Author's Affiliation Chiba University (Chiba Univ.)
6th Author's Name Kazuhiro Kudo  
6th Author's Affiliation Chiba University (Chiba Univ.)
7th Author's Name Masakazu Nakamura  
7th Author's Affiliation Chiba University (Chiba Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-01-12 16:05:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2009-76 
Volume (vol) vol.109 
Number (no) no.359 
Page pp.51-56 
#Pages 6 
Date of Issue 2010-01-05 (OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan