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| Presentation | 2010-01-14 14:05 Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)  ED2009-186 MW2009-169 Link to ES Tech. Rep. Archives: ED2009-186 MW2009-169 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to investigate the effect of interface traps at the HfO2/AlGaN interface. In experiment, the threshold voltage shifted toward the positive direction after the positive gate bias stress. The amount of threshold voltage shift was dependent on waiting time after the gate bias stress. The simulation results assuming three trap levels of EC – ET = 0.4, 0.765, 1.65 eV which were obtained based on the analytical consideration of this experimental result explained the experimental results well. The shallow traps at EC – ET = 0.4 eV caused the gm decrease at large VGS and the deep traps at EC – ET = 0.765, 1.65 eV caused threshold voltage shift after the bias stress. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HfO2/AlGaN/GaN MOSFET / device simulation / interface trap / transient response / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 360, ED2009-186, pp. 65-70, Jan. 2010. | |
| Paper # | ED2009-186 | |
| Date of Issue | 2010-01-06 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-186 MW2009-169 Link to ES Tech. Rep. Archives: ED2009-186 MW2009-169 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2010-01-13 - 2010-01-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | HfO2/AlGaN/GaN MOSFET |
| Keyword(2) | device simulation |
| Keyword(3) | interface trap |
| Keyword(4) | transient response |
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| 1st Author's Name | Yoshihisa Hayashi |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Shigeru Kishimoto |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Takashi Mizutani |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-01-14 14:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-186, MW2009-169 |
| Volume (vol) | vol.109 |
| Number (no) | no.360(ED), no.361(MW) |
| Page | pp.65-70 |
| #Pages | 6 |
| Date of Issue | 2010-01-06 (ED, MW) |
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