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| Presentation | 2010-01-28 14:15 Solution-processed n-ZnO nanocrystal/p-pentacene heterojunction EL devices Hayato Kawasaki, Hisazumi Takeuchi, Toshihiko Toyama, Hiroaki Okamoto (Osaka Univ.)  EID2009-54 Link to ES Tech. Rep. Archives: EID2009-54 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We demonstrate DC-driven hybrid EL devices composed of solution-processed n-ZnO nanocrystal (NC) emission layers and p-pentacene hole-transport layers. The structure of the EL device was glass/ITO/emission layer/pentacene/Al. The emission layer consisting of ZnO NCs with a crystal size of 8 nm was prepared by a screen-printing method. When the ITO-electrode was positively biased over 10 V, the EL emission, consisting of sharp ultraviolet (~380 nm) and broad green-yellow (~560 nm) spectral components, was observed. We introduced another pentacene layer at the cathode side, and found that the green-yellow component decreased. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | nanocrystal / EL / solution process / ZnO / exciton recombination / screen-printing / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 404, EID2009-54, pp. 29-32, Jan. 2010. | |
| Paper # | EID2009-54 | |
| Date of Issue | 2010-01-21 (EID) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2009-54 Link to ES Tech. Rep. Archives: EID2009-54 |
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| Conference Information | |
| Committee | ITE-IDY EID IEIJ-SSL IEE-EDD |
| Conference Date | 2010-01-28 - 2010-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyusyu Univ. (Chikushi Campus) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2010-01-IDY-EID-OMD-EDD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Solution-processed n-ZnO nanocrystal/p-pentacene heterojunction EL devices |
| Sub Title (in English) | |
| Keyword(1) | nanocrystal |
| Keyword(2) | EL |
| Keyword(3) | solution process |
| Keyword(4) | ZnO |
| Keyword(5) | exciton recombination |
| Keyword(6) | screen-printing |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hayato Kawasaki |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Hisazumi Takeuchi |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Toshihiko Toyama |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Hiroaki Okamoto |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-01-28 14:15:00 |
| Presentation Time | 5 minutes |
| Registration for | EID |
| Paper # | EID2009-54 |
| Volume (vol) | vol.109 |
| Number (no) | no.404 |
| Page | pp.29-32 |
| #Pages | 4 |
| Date of Issue | 2010-01-21 (EID) |
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