Paper Abstract and Keywords |
Presentation |
2010-01-28 14:20
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) Link to ES Tech. Rep. Archives: EID2009-55 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an optical method of Two-wavelength Excited Photoluminescence, as the non-destructive, non-contacting spectroscopy without electrode. Though the dependence of intensity and energy (1.27~1.95eV) of the below-gap excitation on the photoluminescence intensity change, we found that Si-doping in both barrier and well layers reduced the density of below-gap states in the QW region. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN / Si-doping / Quantum well structure / Non-radiative recombination center / Two-wavelength excited photoluminescence / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, pp. 33-36, Jan. 2010. |
Paper # |
|
Date of Issue |
2010-01-21 (EID) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: EID2009-55 |
Conference Information |
Committee |
ITE-IDY EID IEIJ-SSL IEE-EDD |
Conference Date |
2010-01-28 - 2010-01-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyusyu Univ. (Chikushi Campus) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
|
Paper Information |
Registration To |
IEIJ-SSL |
Conference Code |
2010-01-IDY-EID-OMD-EDD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence |
Sub Title (in English) |
|
Keyword(1) |
InGaN |
Keyword(2) |
Si-doping |
Keyword(3) |
Quantum well structure |
Keyword(4) |
Non-radiative recombination center |
Keyword(5) |
Two-wavelength excited photoluminescence |
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Tomohiko Yamaguchi |
1st Author's Affiliation |
Saitama University (Saitama Univ.) |
2nd Author's Name |
Kouhei Igarashi |
2nd Author's Affiliation |
Saitama University (Saitama Univ.) |
3rd Author's Name |
Takeshi Fukuda |
3rd Author's Affiliation |
Saitama University (Saitama Univ.) |
4th Author's Name |
Zentaro Honda |
4th Author's Affiliation |
Saitama University (Saitama Univ.) |
5th Author's Name |
Norihiko Kamata |
5th Author's Affiliation |
Saitama University (Saitama Univ.) |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2010-01-28 14:20:00 |
Presentation Time |
5 minutes |
Registration for |
IEIJ-SSL |
Paper # |
EID2009-55 |
Volume (vol) |
vol.109 |
Number (no) |
no.404 |
Page |
pp.33-36 |
#Pages |
4 |
Date of Issue |
2010-01-21 (EID) |