Paper Abstract and Keywords |
Presentation |
2010-02-05 15:15
Chip-Level and Package-Level Seamless Interconnect Technologies for Advanced Packaging Shintaro Yamamichi, Kentaro Mori, Katsumi Kikuchi, Hideya Murai, D. Ohshima, Y. Nakashima (NEC), Kouji Soejima, Masaya Kawano (NEC Electronics), Tomoo Murakami (NEC) SDM2009-189 Link to ES Tech. Rep. Archives: SDM2009-189 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Interposer-process-oriented thick-Cu-wiring technologies have been developed. Cu wiring thickness is 5 to 10 um, and interlayer dielectric is organic resin. Chip-level seamless interconnects are realized using a resin CMP process, and reliability on a flip-chip ball grid array (FCBGA) package is confirmed with these interconnects. Package-level seamless interconnects are formed by embedding a thinned CPU chip into a resin on Cu base plate. This seamless package is thinner, and has lower thermal resistance and better power delivery, compared to a conventional FCBGA package. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Seamless / Multi-layer wiring / Superconnect / Embedded active / Interposer / Packaging / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 412, SDM2009-189, pp. 43-48, Feb. 2010. |
Paper # |
SDM2009-189 |
Date of Issue |
2010-01-29 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2009-189 Link to ES Tech. Rep. Archives: SDM2009-189 |
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