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Paper Abstract and Keywords
Presentation 2010-02-05 10:50
Highly-Reliable Cu Interconnect covered with CoWB Metal-cap in a Waterproof Molecular-Pore-Stack (MPS)-SiOCH film
Yoshihiro Hayashi, Masayoshi Tagami, Naoya Furutake, Naoya Inoue, Emiko Nakazawa, Kouji Arita (NEC Electronics) SDM2009-183
Abstract (in Japanese) (See Japanese page) 
(in English) A new low-power copper (Cu) interconnect structure is developed with selective-metal (CoWB) cap, which selectively covers surface of Cu buried in a special hydrophobic porous low-k film with isolated pores, so called as a molecular-pore-stack (MPS)-SiOCH film. The new technology is essential to develop highly-reliable, leading-edge 28/20nm-node LSI devices especially for automobile applications. The interconnect reliability dramatically increased by ten times as compared with the conventional interconnects, while keeping the dielectric reliability high.
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Reference Info. IEICE Tech. Rep., vol. 109, no. 412, SDM2009-183, pp. 7-11, Feb. 2010.
Paper # SDM2009-183 
Date of Issue 2010-01-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-02-05 - 2010-02-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2010-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Highly-Reliable Cu Interconnect covered with CoWB Metal-cap in a Waterproof Molecular-Pore-Stack (MPS)-SiOCH film 
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1st Author's Name Yoshihiro Hayashi  
1st Author's Affiliation NEC Electronics Corporation (NEC Electronics)
2nd Author's Name Masayoshi Tagami  
2nd Author's Affiliation NEC Electronics Corporation (NEC Electronics)
3rd Author's Name Naoya Furutake  
3rd Author's Affiliation NEC Electronics Corporation (NEC Electronics)
4th Author's Name Naoya Inoue  
4th Author's Affiliation NEC Electronics Corporation (NEC Electronics)
5th Author's Name Emiko Nakazawa  
5th Author's Affiliation NEC Electronics Corporation (NEC Electronics)
6th Author's Name Kouji Arita  
6th Author's Affiliation NEC Electronics Corporation (NEC Electronics)
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Speaker Author-1 
Date Time 2010-02-05 10:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-183 
Volume (vol) vol.109 
Number (no) no.412 
Page pp.7-11 
#Pages 5 
Date of Issue 2010-01-29 (SDM) 

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