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Paper Abstract and Keywords
Presentation 2010-06-22 10:20
An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power consumption device by reduction of power supply voltage. High ION of 1600 uA/um of SiNW nFET @ Vg-Vth=1.0V was achieved with rectangular cross-sectional shape. Two-dimensional device simulation showed that high inversion electron density regions were formed along the corners of the SiNW FETs. Experimental results of advanced split-CV technique showed that as the cross-sectional dimensions decrease inversion carrier density normalized by peripheral length increased, which coincides with the simulation results. Effective electron mobility of SiNW nFET surpassed that of planar SOI nFET. The high carrier density and effective mobility leads to high ION of SiNW nFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon nanowire FET / SOI / Split-CV technique / corner effect / effective carrier mobility / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 90, SDM2010-35, pp. 11-16, June 2010.
Paper # SDM2010-35 
Date of Issue 2010-06-15 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-06-22 - 2010-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET 
Sub Title (in English)  
Keyword(1) silicon nanowire FET  
Keyword(2) SOI  
Keyword(3) Split-CV technique  
Keyword(4) corner effect  
Keyword(5) effective carrier mobility  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Soshi Sato  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Kuniyuki Kakushima  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Parhat Ahmet  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
4th Author's Name Kenji Ohmori  
4th Author's Affiliation Waseda University (Waseda Univ.)
5th Author's Name Kenji Natori  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
6th Author's Name Hiroshi Iwai  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
7th Author's Name Keisaku Yamada  
7th Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2010-06-22 10:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2010-35 
Volume (vol) vol.110 
Number (no) no.90 
Page pp.11-16 
#Pages 6 
Date of Issue 2010-06-15 (SDM) 

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