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Paper Abstract and Keywords
Presentation 2010-06-30 16:25
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes
Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2010-62 SDM2010-63
Abstract (in Japanese) (See Japanese page) 
(in English) A resonant tunneling diode (RTD) is one of high-speed electron devices with negative differential resistance (NDR) characteristics. In this paper, we propose a low insertion loss monolithic isolator, which can operate up to sub-millimeter region, by using RTDs and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed device. It is found that unidirectional amplifications as well as isolation characteristics are feasible below sub-millimeter waveband as a result of numerical calculations.
Keyword (in Japanese) (See Japanese page) 
(in English) isolator / RTD / NDR / HEMT / insertion loss / unidirectional characteristics / millimeter wave /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 109, ED2010-62, pp. 49-53, June 2010.
Paper # ED2010-62 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-62 SDM2010-63

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes 
Sub Title (in English)  
Keyword(1) isolator  
Keyword(2) RTD  
Keyword(3) NDR  
Keyword(4) HEMT  
Keyword(5) insertion loss  
Keyword(6) unidirectional characteristics  
Keyword(7) millimeter wave  
Keyword(8)  
1st Author's Name Nobuhiko Tanaka  
1st Author's Affiliation Tokyo Metropolitan University (Tokyo Metro. Univ.)
2nd Author's Name Mitsufumi Saito  
2nd Author's Affiliation Tokyo Metropolitan University (Tokyo Metro. Univ.)
3rd Author's Name Michihiko Suhara  
3rd Author's Affiliation Tokyo Metropolitan University (Tokyo Metro. Univ.)
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Speaker Author-1 
Date Time 2010-06-30 16:25:00 
Presentation Time 15 minutes 
Registration for ED 
Paper # ED2010-62, SDM2010-63 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.49-53 
#Pages 5 
Date of Issue 2010-06-23 (ED, SDM) 

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