講演抄録/キーワード |
講演名 |
2010-06-30 16:10
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures ○Safumi Suzuki・Kiyohito Sawada・Atsushi Teranishi・Masahiro Asada(Tokyo Inst. of Tech.)・Hiroki Sugiyama・Haruki Yokoyama(NTT) ED2010-61 SDM2010-62 エレソ技報アーカイブへのリンク:ED2010-61 SDM2010-62 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spike-doped structures. The voltages at the current peak were 0.67 and 0.4 V for RTDs with the spike-doping concentrations of 2×10^18 and 1×10^19 cm^-3, respectively, and 0.94 V for the RTD without spike doping. The peak current densities were around 18 mA/um^2 and remained almost unchanged even after the spike doping. The highest oscillation frequency observed in this study was 898 GHz in the 0.53-um^2-mesa area for the RTD with a spike-doping concentration of 2×10^18 cm^-3. |
キーワード |
(和) |
テラヘルツ / 共鳴トンネルダイオード / / / / / / |
(英) |
terahertz / resonant tunneling diode / / / / / / |
文献情報 |
信学技報, vol. 110, no. 109, ED2010-61, pp. 47-48, 2010年6月. |
資料番号 |
ED2010-61 |
発行日 |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2010-61 SDM2010-62 エレソ技報アーカイブへのリンク:ED2010-61 SDM2010-62 |