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Paper Abstract and Keywords
Presentation 2010-07-02 16:15
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123
Abstract (in Japanese) (See Japanese page) 
(in English) The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important issues for the future nano-electronic devices. In order to reveal the electron injection process to the nano-structure, we have investigated the transient current characteristics of Si-nano dot floating-gate memory. We have reported a collective motion of electrons between the two-dimensional electron gas and the nano-dot based on the measurement of the Si Nano-Dot floating gate Memory. In this study, by extending our conventional tunneling model, we propose the collective tunneling model, which supports the collective motion of electrons, and this insight is useful for designing future nano-electronic devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Electron Dynamics / Collective Motion of Electron / Si-Nano Dots / Quantum Dot / 2DEG / Nano-Electronics / Tunneling / Si-Nano Dots Floating Gate MOS Capacitor  
Reference Info. IEICE Tech. Rep., vol. 110, no. 110, SDM2010-123, pp. 319-324, June 2010.
Paper # SDM2010-123 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-122 SDM2010-123

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor 
Sub Title (in English)  
Keyword(1) Electron Dynamics  
Keyword(2) Collective Motion of Electron  
Keyword(3) Si-Nano Dots  
Keyword(4) Quantum Dot  
Keyword(5) 2DEG  
Keyword(6) Nano-Electronics  
Keyword(7) Tunneling  
Keyword(8) Si-Nano Dots Floating Gate MOS Capacitor  
1st Author's Name Masakazu Muraguchi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yoko Sakurai  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba.)
3rd Author's Name Yukihiro Takada  
3rd Author's Affiliation University of Tsukuba (Univ. of Tsukuba.)
4th Author's Name Shintaro Nomura  
4th Author's Affiliation University of Tsukuba (Univ. of Tsukuba.)
5th Author's Name Kenji Shiraishi  
5th Author's Affiliation University of Tsukuba (Univ. of Tsukuba.)
6th Author's Name Mitsuhisa Ikeda  
6th Author's Affiliation Hiroshima University (Hiroshima Univ.)
7th Author's Name Katsunori Makihara  
7th Author's Affiliation Hiroshima University (Hiroshima Univ.)
8th Author's Name Seiichi Miyazaki  
8th Author's Affiliation Hiroshima University (Hiroshima Univ.)
9th Author's Name Yasuteru Shigeta  
9th Author's Affiliation University of Hyogo (Univ. of Hyogo)
10th Author's Name Tetsuo Endoh  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2010-07-02 16:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2010-122, SDM2010-123 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.319-324 
#Pages 6 
Date of Issue 2010-06-23 (ED, SDM) 

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