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| Presentation | 2010-07-02 11:35 The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.)  ED2010-109 SDM2010-110 Link to ES Tech. Rep. Archives: ED2010-109 SDM2010-110 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical issues, such as increasing power consumption, and difficulty to aggressively scale the device size and so on. To overcome this issue, we have proposed Current Controlled-MOS Current Mode Logic (CC-MCML) to realize the reduction of power consumption and the enhancement of the operation speed in logic circuits without scaling the gate length of the MOSFET, and confirmed the performance of these circuits both theoretically and experimentally. In the CC-MCML it is extremely important to control the input voltage of the MOSFET used as the constant current source in order to make the base voltage of the input signal and the output signal equivalent. In this paper, we propose CC-MCML/MTJ (Magnetic Tunnel Junction) circuit, which is one type of nonvolatile memory hybrid circuit technology. A more stable and precise operation is realized by cutting the range of the input voltage of the constant current source, and it is shown that the operation of CC-MCML/MTJ Hybrid Circuit enables us to suppress the base voltage difference due to the Vth fluctuation in comparison with the conventional CC-MCML. These results imply the high potential of Si-CMOS/Spintronics Hybrid technologies for future IC. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS / MTJ / TMR | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-110, pp. 257-262, June 2010. | |
| Paper # | SDM2010-110 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-109 SDM2010-110 Link to ES Tech. Rep. Archives: ED2010-109 SDM2010-110 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation |
| Sub Title (in English) | |
| Keyword(1) | Current Controlled-MCML |
| Keyword(2) | MCML |
| Keyword(3) | Vth Fluctuation |
| Keyword(4) | Stability |
| Keyword(5) | NMOS |
| Keyword(6) | PMOS |
| Keyword(7) | MTJ |
| Keyword(8) | TMR |
| 1st Author's Name | Tetsuo Endoh |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Masashi Kamiyanagi |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Masakazu Muraguchi |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Takuya Imamoto |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Takeshi Sasaki |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-07-02 11:35:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-109, SDM2010-110 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.257-262 |
| #Pages | 6 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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