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| Presentation | 2010-10-21 15:00 Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens Daisuke Kosemura, Atsushi Ogura (Meiji Univ.)  SDM2010-153 Link to ES Tech. Rep. Archives: SDM2010-153 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively. That is why Raman spectroscopy has been performed to evaluate stresses in semiconductor devices. However, it is impossible to evaluate stress quantitatively using conventional Raman spectroscopy. That is to say, an assumption is needed when Raman wavenumber shift is converted into stress. It is not enough to evaluate such a simple stress state, because the stress state in a device is considered to be complicated. In this study, the goal is to evaluate stress tensor using Raman spectroscopy with a high-numerical aperture (NA) lens. We performed to excite a transverse optical (TO) phonon mode in strained-Si on insulator (SSOI), which is a forbidden mode in conventional Raman spectroscopy. We also performed to evaluate biaxial stresses in transmission electron microscopy (TEM) samples of SSOI using the TO mode and to quantitatively evaluate stress relaxation in TEM samples. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Raman spectroscopy / immersion-oil / SSOI / biaxial stress / TEM / stress relaxation / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 241, SDM2010-153, pp. 7-12, Oct. 2010. | |
| Paper # | SDM2010-153 | |
| Date of Issue | 2010-10-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-153 Link to ES Tech. Rep. Archives: SDM2010-153 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-10-21 - 2010-10-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor process science and new technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens |
| Sub Title (in English) | |
| Keyword(1) | Raman spectroscopy |
| Keyword(2) | immersion-oil |
| Keyword(3) | SSOI |
| Keyword(4) | biaxial stress |
| Keyword(5) | TEM |
| Keyword(6) | stress relaxation |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Daisuke Kosemura |
| 1st Author's Affiliation | Meiji University (Meiji Univ.) |
| 2nd Author's Name | Atsushi Ogura |
| 2nd Author's Affiliation | Meiji University (Meiji Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-10-21 15:00:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2010-153 |
| Volume (vol) | vol.110 |
| Number (no) | no.241 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2010-10-14 (SDM) |
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