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Paper Abstract and Keywords
Presentation 2010-10-21 15:00
Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens
Daisuke Kosemura, Atsushi Ogura (Meiji Univ.) SDM2010-153
Abstract (in Japanese) (See Japanese page) 
(in English) Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively. That is why Raman spectroscopy has been performed to evaluate stresses in semiconductor devices. However, it is impossible to evaluate stress quantitatively using conventional Raman spectroscopy. That is to say, an assumption is needed when Raman wavenumber shift is converted into stress. It is not enough to evaluate such a simple stress state, because the stress state in a device is considered to be complicated. In this study, the goal is to evaluate stress tensor using Raman spectroscopy with a high-numerical aperture (NA) lens. We performed to excite a transverse optical (TO) phonon mode in strained-Si on insulator (SSOI), which is a forbidden mode in conventional Raman spectroscopy. We also performed to evaluate biaxial stresses in transmission electron microscopy (TEM) samples of SSOI using the TO mode and to quantitatively evaluate stress relaxation in TEM samples.
Keyword (in Japanese) (See Japanese page) 
(in English) Raman spectroscopy / immersion-oil / SSOI / biaxial stress / TEM / stress relaxation / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-153, pp. 7-12, Oct. 2010.
Paper # SDM2010-153 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens 
Sub Title (in English)  
Keyword(1) Raman spectroscopy  
Keyword(2) immersion-oil  
Keyword(3) SSOI  
Keyword(4) biaxial stress  
Keyword(5) TEM  
Keyword(6) stress relaxation  
Keyword(7)  
Keyword(8)  
1st Author's Name Daisuke Kosemura  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Atsushi Ogura  
2nd Author's Affiliation Meiji University (Meiji Univ.)
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Speaker Author-1 
Date Time 2010-10-21 15:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-153 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.7-12 
#Pages 6 
Date of Issue 2010-10-14 (SDM) 

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