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Paper Abstract and Keywords
Presentation 2010-10-21 17:40
Low-temperature crystallization of thin-film amorphous silicon
Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba) SDM2010-158
Abstract (in Japanese) (See Japanese page) 
(in English) Polysilicon are frequently used in various manufacture censor, solar cell and liquid crystal. In recent years, It comes to often use the thin polysilicon layer for those devices, surface morphology and the precise control with the dose profile are requested. When the polysilicon layer is formed during CVD deposition, it is difficult to obtain flat film surface. Moreover, fabrications of high-quality polysilicon require high temperature film formation. In the case of fabrication of polysilicon thin films by deposition of flat amorphous silicon film and crystallization by thermal process, there is a problem of requiring the high temperature for crystallization because of difficulty of the nucleation in the film. To improve these problems, we tried the method of forming the thin film polysilicon which generate the crystal grain in the amorphous silicon during CVD deposition and use the grain as a nucleus of the crystallization, and performed physical analysis.
Keyword (in Japanese) (See Japanese page) 
(in English) Polysilicon / Amorphous Silicon / Crystallization / TEM / XRD / SIMS / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-158, pp. 31-34, Oct. 2010.
Paper # SDM2010-158 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-temperature crystallization of thin-film amorphous silicon 
Sub Title (in English)  
Keyword(1) Polysilicon  
Keyword(2) Amorphous Silicon  
Keyword(3) Crystallization  
Keyword(4) TEM  
Keyword(5) XRD  
Keyword(6) SIMS  
Keyword(7)  
Keyword(8)  
1st Author's Name Yoko Iwakaji  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Jun Hirota  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Moto Yabuki  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Hirokazu Ishida  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Wakana Kaneko  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Ichiro Mizushima  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Hiroshi Akahori  
7th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2010-10-21 17:40:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-158 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.31-34 
#Pages 4 
Date of Issue 2010-10-14 (SDM) 

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