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Paper Abstract and Keywords
Presentation 2010-10-22 11:10
Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization
Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.) SDM2010-162
Abstract (in Japanese) (See Japanese page) 
(in English) Tensile strain is induced in the polycrystalline silicon (poly-Si) films formed by CW laser lateral crystallization (CLC). X-ray diffraction measurements on in-plane direction clarified that the strain values at surface and back interface were around 0.3% and over 0.4%, respectively. To investigate the modulation of electron mobility induced by the tensile strain, 4-terminal CLC poly-Si thin film transistors (TFTs) having both front and back gate electrodes were fabricated. The electrical characteristics on both front and back channels were evaluated. It was found that back channel electron mobility was 1.2 times larger than front channel electron mobility due to the larger tensile strain at the back interface.
Keyword (in Japanese) (See Japanese page) 
(in English) CW laser lateral crystallization / Thin film transistor / Tensile strain / Electron mobility / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-162, pp. 41-44, Oct. 2010.
Paper # SDM2010-162 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization 
Sub Title (in English)  
Keyword(1) CW laser lateral crystallization  
Keyword(2) Thin film transistor  
Keyword(3) Tensile strain  
Keyword(4) Electron mobility  
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Keyword(6)  
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1st Author's Name Shuntaro Fujii  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Shin-Ichiro Kuroki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Koji Kotani  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2010-10-22 11:10:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-162 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.41-44 
#Pages 4 
Date of Issue 2010-10-14 (SDM) 

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