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| Presentation | 2010-11-11 14:40 [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2010-175 Link to ES Tech. Rep. Archives: SDM2010-175 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high temperature source/drain activation annealing for either poly-Si or metal gate. This effective work function change, called Fermi level pinning, is considered to be due to an interface dipole formation at high-k/ electrode interface originating from oxygen vacancy ($V_{\rm O}$) generated in high-k layer. In this work, we experimentally verified that an energy gain of electron transfer from $V_{\rm O}$ defect level in high-k to electrode and reductant elements in high-k/metal gate stacks such as carbon an silicon atoms dominate $V_{\rm O}$ formation kinetics, and developed a guiding principle for gate-first high-k/metal gate stacks to control the effective work function. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-k Gate Dielectrics / Metal Gate / Work Function / Oxygen Vacancy / Interface Dipole / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 274, SDM2010-175, pp. 23-28, Nov. 2010. | |
| Paper # | SDM2010-175 | |
| Date of Issue | 2010-11-04 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-175 Link to ES Tech. Rep. Archives: SDM2010-175 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulations, etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks |
| Sub Title (in English) | |
| Keyword(1) | High-k Gate Dielectrics |
| Keyword(2) | Metal Gate |
| Keyword(3) | Work Function |
| Keyword(4) | Oxygen Vacancy |
| Keyword(5) | Interface Dipole |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuji Hosoi |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Masayuki Saeki |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Yuki Kita |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Yudai Oku |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Hiroaki Arimura |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Naomu Kitano |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
| 7th Author's Name | Kenji Shiraishi |
| 7th Author's Affiliation | University of Tsukuba (Univ. Tsukuba) |
| 8th Author's Name | Keisaku Yamada |
| 8th Author's Affiliation | University of Tsukuba (Univ. Tsukuba) |
| 9th Author's Name | Takayoshi Shimura |
| 9th Author's Affiliation | Osaka University (Osaka Univ.) |
| 10th Author's Name | Heiji Watanabe |
| 10th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-11-11 14:40:00 |
| Presentation Time | 50 minutes |
| Registration for | SDM |
| Paper # | SDM2010-175 |
| Volume (vol) | vol.110 |
| Number (no) | no.274 |
| Page | pp.23-28 |
| #Pages | 6 |
| Date of Issue | 2010-11-04 (SDM) |
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