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Paper Abstract and Keywords
Presentation 2010-11-12 15:05
Strain Dependence of Hole Currents in Silicon Nanowire FETs
Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183
Abstract (in Japanese) (See Japanese page) 
(in English) Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed for strained Si nanowire FETs with a diameter of 1.5 nm and 2.5 nm. Simulation results show that for Si nanowire FETs with a diameter of 2.5 nm, the compressive strain enhances the ballistic hole current, while the tensile strain gives opposite results. For Si nanowire FETs with a diameter of 1.5 nm, the ballistic hole current hardly depends on the strain magnitude.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon / nanowire / strain / nonequilibrium Green's function method / tight-binding approximation / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 274, SDM2010-183, pp. 65-69, Nov. 2010.
Paper # SDM2010-183 
Date of Issue 2010-11-04 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2010-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Strain Dependence of Hole Currents in Silicon Nanowire FETs 
Sub Title (in English)  
Keyword(1) silicon  
Keyword(2) nanowire  
Keyword(3) strain  
Keyword(4) nonequilibrium Green's function method  
Keyword(5) tight-binding approximation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideki Minari  
1st Author's Affiliation Osaka University/JST-CREST (Osaka Univ./JST-CREST)
2nd Author's Name Tatsuro Kitayama  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Masahiro Yamamoto  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Nobuya Mori  
4th Author's Affiliation Osaka University/JST-CREST (Osaka Univ./JST-CREST)
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Speaker Author-1 
Date Time 2010-11-12 15:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2010-183 
Volume (vol) vol.110 
Number (no) no.274 
Page pp.65-69 
#Pages 5 
Date of Issue 2010-11-04 (SDM) 

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