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Paper Abstract and Keywords
Presentation 2010-12-01 13:15
[Invited Talk] Monolithic 3D-FPGA with TFT SRAM over 90nm 9 layer Cu CMOS
Tatasuya Naito, Tatsuya Ishida (Toshiba), Takeshi Onoduka (Covalent Materials), Masahito Nishigoori, Takeo Nakayama, Yoshihiro Ueno, Yasumi Ishimoto, Akihiro Suzuki, Chung Weicheng (Toshiba), Raminda Madurawe (readyASIC), Sheldon Wu (China International Intellectual Property Services), Shu Ikeda (tei Solutions), Hisato Oyamatsu (Toshiba) RECONF2010-50
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
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Reference Info. IEICE Tech. Rep., vol. 110, no. 319, RECONF2010-50, pp. 65-69, Nov. 2010.
Paper # RECONF2010-50 
Date of Issue 2010-11-23 (RECONF) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF RECONF2010-50

Conference Information
Committee VLD DC IPSJ-SLDM CPSY RECONF ICD CPM  
Conference Date 2010-11-29 - 2010-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyushu University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2010 ―New Field of VLSI Design― 
Paper Information
Registration To RECONF 
Conference Code 2010-11-VLD-DC-SLDM-CPSY-RECONF-ICD-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Monolithic 3D-FPGA with TFT SRAM over 90nm 9 layer Cu CMOS 
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1st Author's Name Tatasuya Naito  
1st Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
2nd Author's Name Tatsuya Ishida  
2nd Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
3rd Author's Name Takeshi Onoduka  
3rd Author's Affiliation Covalent Materials Corporation (Covalent Materials)
4th Author's Name Masahito Nishigoori  
4th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
5th Author's Name Takeo Nakayama  
5th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
6th Author's Name Yoshihiro Ueno  
6th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
7th Author's Name Yasumi Ishimoto  
7th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
8th Author's Name Akihiro Suzuki  
8th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
9th Author's Name Chung Weicheng  
9th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
10th Author's Name Raminda Madurawe  
10th Author's Affiliation readyASIC Inc. (readyASIC)
11th Author's Name Sheldon Wu  
11th Author's Affiliation China International Intellectual Property Services Ltd. (China International Intellectual Property Services)
12th Author's Name Shu Ikeda  
12th Author's Affiliation tei Solutions Inc. (tei Solutions)
13th Author's Name Hisato Oyamatsu  
13th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
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Date Time 2010-12-01 13:15:00 
Presentation Time 40 minutes 
Registration for RECONF 
Paper # RECONF2010-50 
Volume (vol) vol.110 
Number (no) no.319 
Page pp.65-69 
#Pages 5 
Date of Issue 2010-11-23 (RECONF) 

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