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Presentation 2010-12-16 15:10
[Poster Presentation] A 65nm CMOS High-Speed and High-Fidelity NBTI Recovery Sensor
Takashi Matsumoto, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. Tech.), Hidetoshi Onodera (Kyoto Univ.) ICD2010-104 Link to ES Tech. Rep. Archives: ICD2010-104
Abstract (in Japanese) (See Japanese page) 
(in English) We proposed an NBTI-recovery sensor with 400ns measurement delay. This sensor contains many unit cells. One unit cell includes ten PMOS DUTs and two assist NMOSes. Parallelizing many unit cells can amplify the leakage current and the assist circuit can reduce the rush current to the ammeter that keeps the measurement range of ammeter constant during measurement. Fast measurement delay is achieved by these two factors. It is confirmed that from 50\(^\circ\)C to 125\(^\circ\)C, NBTI
recovery follows log t from 400ns to 3000s. By degrading and recovering thousands of PMOS transistors at the same time, we can observe that the time constants of positively charged defects which are related to NBTI are log-uniformly distributed in the PMOS devices. Also this circuit has the highest fidelity to NBTI recovery measurement because off-leak current is used for NBTI recovery characterization and stress is not added during measurement.
Keyword (in Japanese) (See Japanese page) 
(in English) dependable VLSI / CMOS / NBTI / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 344, ICD2010-104, pp. 55-58, Dec. 2010.
Paper # ICD2010-104 
Date of Issue 2010-12-09 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2010-104 Link to ES Tech. Rep. Archives: ICD2010-104

Conference Information
Committee ICD  
Conference Date 2010-12-16 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) RCAST, Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Workshop for Graduate Student and Young Researchers 
Paper Information
Registration To ICD 
Conference Code 2010-12-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 65nm CMOS High-Speed and High-Fidelity NBTI Recovery Sensor 
Sub Title (in English)  
Keyword(1) dependable VLSI  
Keyword(2) CMOS  
Keyword(3) NBTI  
1st Author's Name Takashi Matsumoto  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Hiroaki Makino  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Kazutoshi Kobayashi  
3rd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
4th Author's Name Hidetoshi Onodera  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Date Time 2010-12-16 15:10:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2010-104 
Volume (vol) vol.110 
Number (no) no.344 
Page pp.55-58 
Date of Issue 2010-12-09 (ICD) 

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