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Paper Abstract and Keywords
Presentation 2010-12-16 14:10
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on InP substrate, and estimated the transit time across the collector depletion region from oscillation characteristics in 0.6-1 THz range. It was found that the graded emitter structure was effective for reduction of the transit time. This result was in good agreement with a simple theoretical analysis, and attributed to reduction of the transition between $\gamma$ and L bands due to low electric field in the collector depletion region.
Keyword (in Japanese) (See Japanese page) 
(in English) resonant tunneling diodes / terahertz oscillator / graded emitter / collector transit time / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 342, ED2010-159, pp. 7-12, Dec. 2010.
Paper # ED2010-159 
Date of Issue 2010-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-159

Conference Information
Committee ED  
Conference Date 2010-12-16 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University (Research Institute of Electrical Communication) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2010-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators 
Sub Title (in English)  
Keyword(1) resonant tunneling diodes  
Keyword(2) terahertz oscillator  
Keyword(3) graded emitter  
Keyword(4) collector transit time  
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Keyword(6)  
Keyword(7)  
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1st Author's Name Atsushi Teranishi  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Safumi Suzuki  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Kaoru Shizuno  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Masahiro Asada  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Hiroki Sugiyama  
5th Author's Affiliation NTT Photonics Laboratories (NTT)
6th Author's Name Haruki Yokoyama  
6th Author's Affiliation NTT Photonics Laboratories (NTT)
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Speaker Author-1 
Date Time 2010-12-16 14:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-159 
Volume (vol) vol.110 
Number (no) no.342 
Page pp.7-12 
#Pages 6 
Date of Issue 2010-12-09 (ED) 

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