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| Presentation | 2010-12-16 09:30 Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo)  ICD2010-95 Link to ES Tech. Rep. Archives: ICD2010-95 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | 8T-SRAM cell with asymmetric pass gate transistor by local electron injection is proposed to solve half select disturb. Two types of electron injection scheme: both side injection scheme and self-repair one side injection scheme are analyzed comprehensively for 65nm technology node 8T-SRAM cell and also for 6T-SRAM cell. This paper shows that in the 6T-SRAM with the local injected electrons [4] the read speed degrades by as much as 6.3 times. In contrast, the proposed 8T-SRAM cell with the self-repair one side injection scheme is most suitable to solve the conflict of the half select disturb, write disturb and read speed. In the proposed 8T-SRAM, the disturb margin increases by 141% without write margin or read speed degradation. The proposed scheme has no process or area penalty compared with the standard CMOS-process 8T-SRAM. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SRAM / 8T-SRAM / HCI / Half Select Disturb / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 344, ICD2010-95, pp. 1-6, Dec. 2010. | |
| Paper # | ICD2010-95 | |
| Date of Issue | 2010-12-09 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
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| Download PDF | ICD2010-95 Link to ES Tech. Rep. Archives: ICD2010-95 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2010-12-16 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RCAST, Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Workshop for Graduate Student and Young Researchers |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2010-12-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | 8T-SRAM |
| Keyword(3) | HCI |
| Keyword(4) | Half Select Disturb |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kentaro Honda |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Kousuke Miyaji |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Shuhei Tanakamaru |
| 3rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 4th Author's Name | Shinji Miyano |
| 4th Author's Affiliation | STARC (STARC) |
| 5th Author's Name | Ken Takeuchi |
| 5th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2010-12-16 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | ICD2010-95 |
| Volume (vol) | vol.110 |
| Number (no) | no.344 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2010-12-09 (ICD) |
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